Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation

Silicon carbide (SiC) is an ideal material for highpower and highperformance electronic applications. Topseeded solution growth (TSSG) is considered as a potential method for bulk growth of highquality SiC single crystals from the liquid phase source material. The crystal growth performance, such as...

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Veröffentlicht in:	Materials 2020-02, Vol.13 (3), p.651
Hauptverfasser:	Ha, Minh-Tan, Lich, Le Van, Shin, Yun-Ji, Bae, Si-Young, Lee, Myung-Hyun, Jeong, Seong-Min
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Coils Computational fluid dynamics Crystal growth Crystal surfaces Fluid flow Graphite Heat Liquid phases Magnetic fields Silicon Silicon carbide Single crystals Velocity
Online-Zugang:	Volltext
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