Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411

Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411

As this research is a personal achievement with no company-related information, and there is no financial support for this paper from Qualcomm Technologies Inc [...].

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Veröffentlicht in:Micromachines (Basel) 2019-12, Vol.11 (1), p.11
Hauptverfasser: Park, Jaeyoung, Yim, Young Uk
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description As this research is a personal achievement with no company-related information, and there is no financial support for this paper from Qualcomm Technologies Inc [...].
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title Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411
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