Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diffraction (XRD) analysis showed a significant increa...

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Veröffentlicht in:	Materials 2020-01, Vol.13 (2), p.434
Hauptverfasser:	Lee, Young-Jae, Schweitz, Michael A., Oh, Jong-Min, Koo, Sang-Mo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Diodes Electrical properties Gallium oxides Gases Heterojunctions High temperature Magnetron sputtering Nitrogen Photoelectrons Silicon carbide Thin films X ray photoelectron spectroscopy
Online-Zugang:	Volltext
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