Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diffraction (XRD) analysis showed a significant increa...

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Veröffentlicht in:Materials 2020-01, Vol.13 (2), p.434
Hauptverfasser: Lee, Young-Jae, Schweitz, Michael A., Oh, Jong-Min, Koo, Sang-Mo
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Sprache:eng
Schlagworte:
Annealing
Diodes
Electrical properties
Gallium oxides
Gases
Heterojunctions
High temperature
Magnetron sputtering
Nitrogen
Photoelectrons
Silicon carbide
Thin films
X ray photoelectron spectroscopy
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Oh, Jong-Min
Koo, Sang-Mo
description Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in the peak intensities of different faces of β-Ga2O3 {(−201), (−401) and (002)}. X-ray photoelectron spectroscopy (XPS) measurement showed that the atomic ratio of oxygen increases under high-temperature annealing. Moreover, an N2-annealed diode exhibited a greater rectifying ratio and a lower thermal activation energy owing to the decrease in oxygen-related traps and vacancies on the Ga2O3 film and Ga2O3–metal interface.
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subjects Annealing
Diodes
Electrical properties
Gallium oxides
Gases
Heterojunctions
High temperature
Magnetron sputtering
Nitrogen
Photoelectrons
Silicon carbide
Thin films
X ray photoelectron spectroscopy
title Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes
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