Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3

Ammonium sulfide ((NH4)2S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH4)2S. It was...

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Veröffentlicht in:	Materials 2019-11, Vol.12 (23), p.3917
Hauptverfasser:	Lee, Jung Sub, Ahn, Tae Young, Kim, Daewon
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Ammonium sulfides Capacitors Communication Depletion Electrical properties Indium phosphides Metal oxide semiconductors Passivity Photoelectrons Spectrum analysis Substrates Sulfur X ray photoelectron spectroscopy
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