Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots

Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots

Extremely long coherence times, excellent single-qubit gate fidelities, and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has...

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Veröffentlicht in:Nano letters 2019-12, Vol.19 (12), p.8653-8657
Hauptverfasser: Eenink, H. G. J, Petit, L, Lawrie, W. I. L, Clarke, J. S, Vandersypen, L. M. K, Veldhorst, M
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container_end_page 8657
container_issue 12
container_start_page 8653
container_title Nano letters
container_volume 19
creator Eenink, H. G. J
Petit, L
Lawrie, W. I. L
Clarke, J. S
Vandersypen, L. M. K
Veldhorst, M
description Extremely long coherence times, excellent single-qubit gate fidelities, and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to
doi_str_mv 10.1021/acs.nanolett.9b03254
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title Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots
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