Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications
Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resulta...
Gespeichert in:
| Veröffentlicht in: | Materials 2019-09, Vol.12 (19), p.3111 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 19 |
| container_start_page | 3111 |
| container_title | Materials |
| container_volume | 12 |
| creator | Yoon, Jong-Hwan |
| description | Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively. |
| doi_str_mv | 10.3390/ma12193111 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6803872</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2548708210</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-7c2c51937eecde64ce4ad0302b09cb52e3cf49bdbdbecbd4434c721c4d6e32d03</originalsourceid><addsrcrecordid>eNpdUU1Lw0AQXUSxUnvxFwS8iBDdrzTZi1iKVaG2h-rJw7LZTGzKJht300L_vVta_Jo5zIN583iPQeiC4BvGBL6tFaFEMELIETojQgxjIjg__oV7aOD9CodijGRUnKIeI0nCaZacofeJyl2lVVfZJrJltGjuR4bOWTS2DmK_BGOimWpsq1xXaQM-Kq2LFp3KDUQz22ysCbcBv0Bt3TYata05yPlzdFIq42FwmH30Nnl4HT_F0_nj83g0jTXLWBenmuokREgBdAFDroGrAjNMcyx0nlBguuQiL0KDzgvOGdcpJZoXQ2A0MPvobq_brvMaCg1N55SRratq5bbSqkr-3TTVUn7YjRxmmGUpDQJXBwFnP9fgO1lXXofoqgG79pJSkRHOE0IC9fIfdWXXrgnxJE14luKMkp2j6z1LO-u9g_LbDMFy9zb58zb2BeElibc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2548708210</pqid></control><display><type>article</type><title>Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications</title><source>PubMed Central Open Access</source><source>MDPI - Multidisciplinary Digital Publishing Institute</source><source>EZB-FREE-00999 freely available EZB journals</source><source>PubMed Central</source><source>Free Full-Text Journals in Chemistry</source><creator>Yoon, Jong-Hwan</creator><creatorcontrib>Yoon, Jong-Hwan</creatorcontrib><description>Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma12193111</identifier><identifier>PMID: 31554285</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Aluminum oxide ; Annealing ; Core-shell particles ; Low temperature ; Metal oxide semiconductors ; Morphology ; Nanoparticles ; Self-assembly ; Silicon dioxide ; Single crystals ; Spatial distribution ; Spectrum analysis ; Storage stability</subject><ispartof>Materials, 2019-09, Vol.12 (19), p.3111</ispartof><rights>2019 by the author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2019 by the author. 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-7c2c51937eecde64ce4ad0302b09cb52e3cf49bdbdbecbd4434c721c4d6e32d03</citedby><cites>FETCH-LOGICAL-c383t-7c2c51937eecde64ce4ad0302b09cb52e3cf49bdbdbecbd4434c721c4d6e32d03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC6803872/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC6803872/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,881,27903,27904,53770,53772</link.rule.ids></links><search><creatorcontrib>Yoon, Jong-Hwan</creatorcontrib><title>Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications</title><title>Materials</title><description>Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively.</description><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Core-shell particles</subject><subject>Low temperature</subject><subject>Metal oxide semiconductors</subject><subject>Morphology</subject><subject>Nanoparticles</subject><subject>Self-assembly</subject><subject>Silicon dioxide</subject><subject>Single crystals</subject><subject>Spatial distribution</subject><subject>Spectrum analysis</subject><subject>Storage stability</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdUU1Lw0AQXUSxUnvxFwS8iBDdrzTZi1iKVaG2h-rJw7LZTGzKJht300L_vVta_Jo5zIN583iPQeiC4BvGBL6tFaFEMELIETojQgxjIjg__oV7aOD9CodijGRUnKIeI0nCaZacofeJyl2lVVfZJrJltGjuR4bOWTS2DmK_BGOimWpsq1xXaQM-Kq2LFp3KDUQz22ysCbcBv0Bt3TYata05yPlzdFIq42FwmH30Nnl4HT_F0_nj83g0jTXLWBenmuokREgBdAFDroGrAjNMcyx0nlBguuQiL0KDzgvOGdcpJZoXQ2A0MPvobq_brvMaCg1N55SRratq5bbSqkr-3TTVUn7YjRxmmGUpDQJXBwFnP9fgO1lXXofoqgG79pJSkRHOE0IC9fIfdWXXrgnxJE14luKMkp2j6z1LO-u9g_LbDMFy9zb58zb2BeElibc</recordid><startdate>20190924</startdate><enddate>20190924</enddate><creator>Yoon, Jong-Hwan</creator><general>MDPI AG</general><general>MDPI</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20190924</creationdate><title>Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications</title><author>Yoon, Jong-Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-7c2c51937eecde64ce4ad0302b09cb52e3cf49bdbdbecbd4434c721c4d6e32d03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Aluminum oxide</topic><topic>Annealing</topic><topic>Core-shell particles</topic><topic>Low temperature</topic><topic>Metal oxide semiconductors</topic><topic>Morphology</topic><topic>Nanoparticles</topic><topic>Self-assembly</topic><topic>Silicon dioxide</topic><topic>Single crystals</topic><topic>Spatial distribution</topic><topic>Spectrum analysis</topic><topic>Storage stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoon, Jong-Hwan</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoon, Jong-Hwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications</atitle><jtitle>Materials</jtitle><date>2019-09-24</date><risdate>2019</risdate><volume>12</volume><issue>19</issue><spage>3111</spage><pages>3111-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively.</abstract><cop>Basel</cop><pub>MDPI AG</pub><pmid>31554285</pmid><doi>10.3390/ma12193111</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1996-1944 |
| ispartof | Materials, 2019-09, Vol.12 (19), p.3111 |
| issn | 1996-1944 1996-1944 |
| language | eng |
| recordid | cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6803872 |
| source | PubMed Central Open Access; MDPI - Multidisciplinary Digital Publishing Institute; EZB-FREE-00999 freely available EZB journals; PubMed Central; Free Full-Text Journals in Chemistry |
| subjects | Aluminum oxide Annealing Core-shell particles Low temperature Metal oxide semiconductors Morphology Nanoparticles Self-assembly Silicon dioxide Single crystals Spatial distribution Spectrum analysis Storage stability |
| title | Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T11%3A57%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20of%20Sn@Al2O3%20Core-shell%20Nanoparticles%20for%20Stable%20Nonvolatile%20Memory%20Applications&rft.jtitle=Materials&rft.au=Yoon,%20Jong-Hwan&rft.date=2019-09-24&rft.volume=12&rft.issue=19&rft.spage=3111&rft.pages=3111-&rft.issn=1996-1944&rft.eissn=1996-1944&rft_id=info:doi/10.3390/ma12193111&rft_dat=%3Cproquest_pubme%3E2548708210%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2548708210&rft_id=info:pmid/31554285&rfr_iscdi=true |