Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain th...

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Veröffentlicht in:	Physical review applied 2019-03, Vol.11 (3), Article 034071
Hauptverfasser:	Schmucker, Scott W., Namboodiri, Pradeep N., Kashid, Ranjit, Wang, Xiqiao, Hu, Binhui, Wyrick, Jonathan E., Myers, Alline F., Schumacher, Joshua D., Silver, Richard M., Stewart, M. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	2-dimensional systems Devices Doped semiconductors Electrical conductivity MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY Nanostructures Quantum transport Sample preparation Scanning tunneling microscopy
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