High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel

Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated. Electroluminescence and X-...

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Veröffentlicht in:	Scientific reports 2019-09, Vol.9 (1), p.13654-7, Article 13654
Hauptverfasser:	Baek, Seung-Hye, Lee, Hyun-Jin, Lee, Sung-Nam
Format:	Artikel
Sprache:	eng
Schlagworte:	639/166/987 639/301/1019/1020/1089 Electrodes Humanities and Social Sciences Indium Light emitting diodes multidisciplinary Science Science (multidisciplinary)
Online-Zugang:	Volltext
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