A Theoretical Treatment of THz Resonances in Semiconductor GaAs p-n Junctions

Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homog...

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Veröffentlicht in:	Materials 2019-07, Vol.12 (15), p.2412
Hauptverfasser:	Janipour, Mohsen, Misirlioglu, I Burc, Sendur, Kursat
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Current carriers Damping Doping Electric fields Electron mass Gallium arsenide Heterostructures Infrared radiation Integrated circuits Light emitting diodes Majority carriers Materials selection Metals Metamaterials Modulators Multilayers Organic light emitting diodes P-n junctions Photovoltaic cells Propagation Quantum dots Relaxation time Semiconductor lasers Semiconductors Solar cells Terahertz frequencies Waveguides
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