Simulation of Field Assisted Sintering of Silicon Germanium Alloys

We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the...

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Veröffentlicht in:	Materials 2019-02, Vol.12 (4), p.570
Hauptverfasser:	Tukmakova, Anastasiia, Novotelnova, Anna, Samusevich, Kseniia, Usenko, Andrey, Moskovskikh, Dmitriy, Smirnov, Alexandr, Mirofyanchenko, Ekaterina, Takagi, Toshiyuki, Miki, Hiroyuki, Khovaylo, Vladimir
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Conductivity Electrical resistivity Electron tunneling Figure of merit Geometry Germanium Grain boundaries Graphite Heat conductivity Mechanical properties Modulus of elasticity Nanostructured materials Plasma sintering Poisson's ratio Silicon base alloys Spark plasma sintering Temperature Temperature dependence Temperature gradients Thermal conductivity Thermal diffusivity
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