Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands

The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetoresistance as a function of the magnetic field. Easily distinguishable resonances in the refle...

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Veröffentlicht in:Scientific reports 2019-02, Vol.9 (1), p.2409-2409, Article 2409
Hauptverfasser: Kriisa, A., Samaraweera, R. L., Heimbeck, M. S., Everitt, H. O., Reichl, C., Wegscheider, W., Mani, R. G.
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container_title Scientific reports
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creator Kriisa, A.
Samaraweera, R. L.
Heimbeck, M. S.
Everitt, H. O.
Reichl, C.
Wegscheider, W.
Mani, R. G.
description The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetoresistance as a function of the magnetic field. Easily distinguishable resonances in the reflected power signal are observed at the same magnetic fields as a reduced amplitude in the Shubnikov-de Haas (SdH) oscillations of the diagonal magnetoresistance. The reflection resonances with concurrent amplitude reduction in SdH oscillations are correlated with cyclotron resonance induced by microwave, mm-wave, and terahertz photoexcitation. The magnetoplasma effect was also investigated. The results suggest a finite frequency zero-magnetic-field intercept, providing an estimate for the plasma frequency. The experimentally measured plasma frequency appears to be somewhat lower than the estimated plasma frequency for these Hall bars. The results, in sum, are consistent with an effective mass ratio of m*/m  = 0.067, the standard value, even in these high mobility GaAs/AlGaAs devices, at very large filling factors. Preliminary findings from this article have been published as conference proceedings, see Kriisa, A., et al ., J. of Phys. Conf. Ser . 864 , 012057 (2017).
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L.</au><au>Heimbeck, M. S.</au><au>Everitt, H. O.</au><au>Reichl, C.</au><au>Wegscheider, W.</au><au>Mani, R. G.</au><aucorp>Georgia State Univ., Atlanta, GA (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2019-02-20</date><risdate>2019</risdate><volume>9</volume><issue>1</issue><spage>2409</spage><epage>2409</epage><pages>2409-2409</pages><artnum>2409</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetoresistance as a function of the magnetic field. 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639/766/119/995
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Decomposition
Electric fields
Energy
Equilibrium
Humanities and Social Sciences
Magnetic fields
Mobility
multidisciplinary
Oscillations
Physics
Plasma
Radiation
Resonance
Science
Science & Technology - Other Topics
Science (multidisciplinary)
title Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
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