Monolayer black phosphorus by sequential wet-chemical surface oxidation

We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation proce...

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Veröffentlicht in:RSC advances 2019-01, Vol.9 (7), p.3570-3576
Hauptverfasser: Wild, Stefan, Lloret, Vicent, Vega-Mayoral, Victor, Vella, Daniele, Nuin, Edurne, Siebert, Martin, Koleśnik-Gray, Maria, Löffler, Mario, Mayrhofer, Karl J J, Gadermaier, Christoph, Krstić, Vojislav, Hauke, Frank, Abellán, Gonzalo, Hirsch, Andreas
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container_end_page 3576
container_issue 7
container_start_page 3570
container_title RSC advances
container_volume 9
creator Wild, Stefan
Lloret, Vicent
Vega-Mayoral, Victor
Vella, Daniele
Nuin, Edurne
Siebert, Martin
Koleśnik-Gray, Maria
Löffler, Mario
Mayrhofer, Karl J J
Gadermaier, Christoph
Krstić, Vojislav
Hauke, Frank
Abellán, Gonzalo
Hirsch, Andreas
description We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.
doi_str_mv 10.1039/c8ra09069f
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subjects Chemistry
Chromophores
Diimide
Field effect transistors
Flakes
Ionic liquids
Monolayers
Organic chemistry
Oxidation
Phosphorus
Photooxidation
Semiconductor devices
solubilization
Thickness
transistors
title Monolayer black phosphorus by sequential wet-chemical surface oxidation
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