Monolayer black phosphorus by sequential wet-chemical surface oxidation
We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation proce...
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Veröffentlicht in: | RSC advances 2019-01, Vol.9 (7), p.3570-3576 |
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creator | Wild, Stefan Lloret, Vicent Vega-Mayoral, Victor Vella, Daniele Nuin, Edurne Siebert, Martin Koleśnik-Gray, Maria Löffler, Mario Mayrhofer, Karl J J Gadermaier, Christoph Krstić, Vojislav Hauke, Frank Abellán, Gonzalo Hirsch, Andreas |
description | We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness. |
doi_str_mv | 10.1039/c8ra09069f |
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Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). 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Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.</description><subject>Chemistry</subject><subject>Chromophores</subject><subject>Diimide</subject><subject>Field effect transistors</subject><subject>Flakes</subject><subject>Ionic liquids</subject><subject>Monolayers</subject><subject>Organic chemistry</subject><subject>Oxidation</subject><subject>Phosphorus</subject><subject>Photooxidation</subject><subject>Semiconductor devices</subject><subject>solubilization</subject><subject>Thickness</subject><subject>transistors</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkV9LwzAUxYMobsy9-AGk4IsI1fxv8yLIcFOYCKLPIU1T19k2M2nVfXszN8f0xcAl95Ifh3NzADhG8AJBIi516hQUkItiD_QxpDzGYdjf6Xtg6P0chsMZwhwdgh6BKaNI8D6Y3NvGVmppXJRVSr9Gi5n1oVzno2wZefPWmaYtVRV9mDbWM1OXOgy-c4XSJrKfZa7a0jZH4KBQlTfDzT0Az-Obp9FtPH2Y3I2up7GmKWxjwyllWpiMipxRwphKNOQ62FEYpgaxjFCtcs2UKhg1WGRFwos01wUyqyIDcLXWXXRZbXIdzDlVyYUra-WW0qpS_n5pypl8se-SEy54woLA2UbA2bCbb2Vdem2qSjXGdl5ijBHEBBPxP4oERBhTuFI9_YPObeea8BOBShgTnJM0UOdrSjvrvTPF1jeCcpWmHKWP199pjgN8srvpFv3JjnwBC8GbSQ</recordid><startdate>20190125</startdate><enddate>20190125</enddate><creator>Wild, Stefan</creator><creator>Lloret, Vicent</creator><creator>Vega-Mayoral, Victor</creator><creator>Vella, Daniele</creator><creator>Nuin, Edurne</creator><creator>Siebert, Martin</creator><creator>Koleśnik-Gray, Maria</creator><creator>Löffler, Mario</creator><creator>Mayrhofer, Karl J J</creator><creator>Gadermaier, Christoph</creator><creator>Krstić, Vojislav</creator><creator>Hauke, Frank</creator><creator>Abellán, Gonzalo</creator><creator>Hirsch, Andreas</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>7S9</scope><scope>L.6</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0001-7962-4382</orcidid><orcidid>https://orcid.org/0000-0001-6613-9644</orcidid><orcidid>https://orcid.org/0000-0003-1458-8872</orcidid><orcidid>https://orcid.org/0000-0001-8599-8436</orcidid><orcidid>https://orcid.org/0000-0003-1564-6210</orcidid></search><sort><creationdate>20190125</creationdate><title>Monolayer black phosphorus by sequential wet-chemical surface oxidation</title><author>Wild, Stefan ; Lloret, Vicent ; Vega-Mayoral, Victor ; Vella, Daniele ; Nuin, Edurne ; Siebert, Martin ; Koleśnik-Gray, Maria ; Löffler, Mario ; Mayrhofer, Karl J J ; Gadermaier, Christoph ; Krstić, Vojislav ; Hauke, Frank ; Abellán, Gonzalo ; Hirsch, Andreas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c480t-e6445c9eb49d54355a7c06c085a208e15b34cadc5aaf54e29bf76f8dcf1ecf1e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Chemistry</topic><topic>Chromophores</topic><topic>Diimide</topic><topic>Field effect transistors</topic><topic>Flakes</topic><topic>Ionic liquids</topic><topic>Monolayers</topic><topic>Organic chemistry</topic><topic>Oxidation</topic><topic>Phosphorus</topic><topic>Photooxidation</topic><topic>Semiconductor devices</topic><topic>solubilization</topic><topic>Thickness</topic><topic>transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wild, Stefan</creatorcontrib><creatorcontrib>Lloret, Vicent</creatorcontrib><creatorcontrib>Vega-Mayoral, Victor</creatorcontrib><creatorcontrib>Vella, Daniele</creatorcontrib><creatorcontrib>Nuin, Edurne</creatorcontrib><creatorcontrib>Siebert, Martin</creatorcontrib><creatorcontrib>Koleśnik-Gray, Maria</creatorcontrib><creatorcontrib>Löffler, Mario</creatorcontrib><creatorcontrib>Mayrhofer, Karl J J</creatorcontrib><creatorcontrib>Gadermaier, Christoph</creatorcontrib><creatorcontrib>Krstić, Vojislav</creatorcontrib><creatorcontrib>Hauke, Frank</creatorcontrib><creatorcontrib>Abellán, Gonzalo</creatorcontrib><creatorcontrib>Hirsch, Andreas</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>AGRICOLA</collection><collection>AGRICOLA - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wild, Stefan</au><au>Lloret, Vicent</au><au>Vega-Mayoral, Victor</au><au>Vella, Daniele</au><au>Nuin, Edurne</au><au>Siebert, Martin</au><au>Koleśnik-Gray, Maria</au><au>Löffler, Mario</au><au>Mayrhofer, Karl J J</au><au>Gadermaier, Christoph</au><au>Krstić, Vojislav</au><au>Hauke, Frank</au><au>Abellán, Gonzalo</au><au>Hirsch, Andreas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolayer black phosphorus by sequential wet-chemical surface oxidation</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2019-01-25</date><risdate>2019</risdate><volume>9</volume><issue>7</issue><spage>3570</spage><epage>3576</epage><pages>3570-3576</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>30854196</pmid><doi>10.1039/c8ra09069f</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-7962-4382</orcidid><orcidid>https://orcid.org/0000-0001-6613-9644</orcidid><orcidid>https://orcid.org/0000-0003-1458-8872</orcidid><orcidid>https://orcid.org/0000-0001-8599-8436</orcidid><orcidid>https://orcid.org/0000-0003-1564-6210</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Chemistry Chromophores Diimide Field effect transistors Flakes Ionic liquids Monolayers Organic chemistry Oxidation Phosphorus Photooxidation Semiconductor devices solubilization Thickness transistors |
title | Monolayer black phosphorus by sequential wet-chemical surface oxidation |
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