Large-Area, Ultrathin Metal-Oxide Semiconductor Nanoribbon Arrays Fabricated by Chemical Lift-Off Lithography

Nanoribbon- and nanowire-based field-effect transistors (FETs) have attracted significant attention due to their high surface-to-volume ratios, which make them effective as chemical and biological sensors. However, the conventional nanofabrication of these devices is challenging and costly, posing a...

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Veröffentlicht in:Nano letters 2018-09, Vol.18 (9), p.5590-5595
Hauptverfasser: Zhao, Chuanzhen, Xu, Xiaobin, Bae, Sang-Hoon, Yang, Qing, Liu, Wenfei, Belling, Jason N, Cheung, Kevin M, Rim, You Seung, Yang, Yang, Andrews, Anne M, Weiss, Paul S
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Sprache:eng
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