PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In Ga As Sb in terms of growth parameters...

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Veröffentlicht in:	Materials 2019-01, Vol.12 (2), p.317
Hauptverfasser:	Cheng, Hui-Wen, Lin, Shen-Chieh, Li, Zong-Lin, Sun, Kien-Wen, Lee, Chien-Ping
Format:	Artikel
Sprache:	eng
Schlagworte:	Arsenic Cladding Crystal surfaces Design Energy levels Epitaxial growth Gallium antimonide Gallium antimonides Gallium arsenide Injection lasers Laser beams Lasers Lasing Lattice matching Material properties Molecular beam epitaxy Optical properties Photonic crystals Photonics Quantum dots Quantum wells Quaternary alloys Reproducibility Room temperature Semiconductor devices Semiconductors Size effects Spectrum analysis Substrates Surface emitting lasers
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