PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE
This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In Ga As Sb in terms of growth parameters...
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| Veröffentlicht in: | Materials 2019-01, Vol.12 (2), p.317 |
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| creator | Cheng, Hui-Wen Lin, Shen-Chieh Li, Zong-Lin Sun, Kien-Wen Lee, Chien-Ping |
| description | This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In
Ga
As
Sb
in terms of growth parameters (V/III ratio, Sb₂/As₂ ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al
Ga
As
Sb
(sample A) and Al
Ga
As
Sb
(sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of Al
Ga
As
Sb
in terms of lasing performance. |
| doi_str_mv | 10.3390/ma12020317 |
| format | Article |
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Ga
As
Sb
in terms of growth parameters (V/III ratio, Sb₂/As₂ ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al
Ga
As
Sb
(sample A) and Al
Ga
As
Sb
(sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of Al
Ga
As
Sb
in terms of lasing performance.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma12020317</identifier><identifier>PMID: 30669560</identifier><language>eng</language><publisher>Switzerland: MDPI AG</publisher><subject>Arsenic ; Cladding ; Crystal surfaces ; Design ; Energy levels ; Epitaxial growth ; Gallium antimonide ; Gallium antimonides ; Gallium arsenide ; Injection lasers ; Laser beams ; Lasers ; Lasing ; Lattice matching ; Material properties ; Molecular beam epitaxy ; Optical properties ; Photonic crystals ; Photonics ; Quantum dots ; Quantum wells ; Quaternary alloys ; Reproducibility ; Room temperature ; Semiconductor devices ; Semiconductors ; Size effects ; Spectrum analysis ; Substrates ; Surface emitting lasers</subject><ispartof>Materials, 2019-01, Vol.12 (2), p.317</ispartof><rights>2019. This work is licensed under https://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2019 by the authors. 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c434t-af13067c77bf6054a745dd6ae130c7e1bf3dec3e2b9f2995924004c1db5d9cfd3</citedby><cites>FETCH-LOGICAL-c434t-af13067c77bf6054a745dd6ae130c7e1bf3dec3e2b9f2995924004c1db5d9cfd3</cites><orcidid>0000-0001-8237-2825</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC6357140/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC6357140/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,27924,27925,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30669560$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Cheng, Hui-Wen</creatorcontrib><creatorcontrib>Lin, Shen-Chieh</creatorcontrib><creatorcontrib>Li, Zong-Lin</creatorcontrib><creatorcontrib>Sun, Kien-Wen</creatorcontrib><creatorcontrib>Lee, Chien-Ping</creatorcontrib><title>PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE</title><title>Materials</title><addtitle>Materials (Basel)</addtitle><description>This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In
Ga
As
Sb
in terms of growth parameters (V/III ratio, Sb₂/As₂ ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al
Ga
As
Sb
(sample A) and Al
Ga
As
Sb
(sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of Al
Ga
As
Sb
in terms of lasing performance.</description><subject>Arsenic</subject><subject>Cladding</subject><subject>Crystal surfaces</subject><subject>Design</subject><subject>Energy levels</subject><subject>Epitaxial growth</subject><subject>Gallium antimonide</subject><subject>Gallium antimonides</subject><subject>Gallium arsenide</subject><subject>Injection lasers</subject><subject>Laser beams</subject><subject>Lasers</subject><subject>Lasing</subject><subject>Lattice matching</subject><subject>Material properties</subject><subject>Molecular beam epitaxy</subject><subject>Optical properties</subject><subject>Photonic crystals</subject><subject>Photonics</subject><subject>Quantum dots</subject><subject>Quantum wells</subject><subject>Quaternary alloys</subject><subject>Reproducibility</subject><subject>Room temperature</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Size effects</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Surface emitting lasers</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kU9PGzEQxa0KVCLg0g9QWeoFVVrwv7XxpRINASKlIlVS9Wh5veOSaHcd7F2kfHuMoAF66FxmNPPT0xs9hD5Rcsq5JmetpYwwwqn6gEZUa1lQLcTem_kAHae0Jrk4p-dMf0QHnEipS0lG6HY-XkxmeA7Rh9jazgEOHi-3GyimeNpd24u0qPBlGKoGip-_E57ZBBEv-ji4foiA5xE2NkKNqy3-8X1yhPa9bRIcv_RD9OtqshzfFLPb6-n4YlY4wUVfWE-zB-WUqrwkpbBKlHUtLeS1U0Arz2twHFilPdO61EwQIhytq7LWztf8EH171t0MVQu1g66PtjGbuGpt3JpgV-b9pVvdmT_hwUheKipIFjh5EYjhfoDUm3aVHDSN7SAMyTCqtOCEMpbRL_-g6zDELr9nGOeMqQyJ_1KMMlVKqVSmvj5TLoaUIvidZUrMU6DmNdAMf3775A79Gx9_BAt6mDA</recordid><startdate>20190121</startdate><enddate>20190121</enddate><creator>Cheng, Hui-Wen</creator><creator>Lin, Shen-Chieh</creator><creator>Li, Zong-Lin</creator><creator>Sun, Kien-Wen</creator><creator>Lee, Chien-Ping</creator><general>MDPI AG</general><general>MDPI</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0001-8237-2825</orcidid></search><sort><creationdate>20190121</creationdate><title>PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE</title><author>Cheng, Hui-Wen ; Lin, Shen-Chieh ; Li, Zong-Lin ; Sun, Kien-Wen ; Lee, Chien-Ping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-af13067c77bf6054a745dd6ae130c7e1bf3dec3e2b9f2995924004c1db5d9cfd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Arsenic</topic><topic>Cladding</topic><topic>Crystal surfaces</topic><topic>Design</topic><topic>Energy levels</topic><topic>Epitaxial growth</topic><topic>Gallium antimonide</topic><topic>Gallium antimonides</topic><topic>Gallium arsenide</topic><topic>Injection lasers</topic><topic>Laser beams</topic><topic>Lasers</topic><topic>Lasing</topic><topic>Lattice matching</topic><topic>Material properties</topic><topic>Molecular beam epitaxy</topic><topic>Optical properties</topic><topic>Photonic crystals</topic><topic>Photonics</topic><topic>Quantum dots</topic><topic>Quantum wells</topic><topic>Quaternary alloys</topic><topic>Reproducibility</topic><topic>Room temperature</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Size effects</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Surface emitting lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cheng, Hui-Wen</creatorcontrib><creatorcontrib>Lin, Shen-Chieh</creatorcontrib><creatorcontrib>Li, Zong-Lin</creatorcontrib><creatorcontrib>Sun, Kien-Wen</creatorcontrib><creatorcontrib>Lee, Chien-Ping</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cheng, Hui-Wen</au><au>Lin, Shen-Chieh</au><au>Li, Zong-Lin</au><au>Sun, Kien-Wen</au><au>Lee, Chien-Ping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE</atitle><jtitle>Materials</jtitle><addtitle>Materials (Basel)</addtitle><date>2019-01-21</date><risdate>2019</risdate><volume>12</volume><issue>2</issue><spage>317</spage><pages>317-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In
Ga
As
Sb
in terms of growth parameters (V/III ratio, Sb₂/As₂ ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al
Ga
As
Sb
(sample A) and Al
Ga
As
Sb
(sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of Al
Ga
As
Sb
in terms of lasing performance.</abstract><cop>Switzerland</cop><pub>MDPI AG</pub><pmid>30669560</pmid><doi>10.3390/ma12020317</doi><orcidid>https://orcid.org/0000-0001-8237-2825</orcidid><oa>free_for_read</oa></addata></record> |
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| issn | 1996-1944 1996-1944 |
| language | eng |
| recordid | cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6357140 |
| source | PubMed Central Open Access; MDPI - Multidisciplinary Digital Publishing Institute; EZB-FREE-00999 freely available EZB journals; PubMed Central; Free Full-Text Journals in Chemistry |
| subjects | Arsenic Cladding Crystal surfaces Design Energy levels Epitaxial growth Gallium antimonide Gallium antimonides Gallium arsenide Injection lasers Laser beams Lasers Lasing Lattice matching Material properties Molecular beam epitaxy Optical properties Photonic crystals Photonics Quantum dots Quantum wells Quaternary alloys Reproducibility Room temperature Semiconductor devices Semiconductors Size effects Spectrum analysis Substrates Surface emitting lasers |
| title | PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE |
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