Nanoscale Investigation of Defects and Oxidation of HfSe2

HfSe2 is a very good candidate for a transition metal dichalcogenide-based field-effect transistor owing to its moderate band gap of about 1 eV and its high-κ dielectric native oxide. Unfortunately, the experimentally determined charge carrier mobility is about 3 orders of magnitude lower than the t...

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Veröffentlicht in:	Journal of physical chemistry. C 2018-11, Vol.122 (44), p.25498-25505
Hauptverfasser:	Yao, Qirong, Zhang, Lijie, Bampoulis, Pantelis, Zandvliet, Harold J. W
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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