High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires
In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide（RGO） fragment-decorated ZnO nanowires was...
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| Veröffentlicht in: | Nano-micro letters 2016, Vol.8 (3), p.247-253 |
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| creator | Tao, Zhi Huang, Yi-an Liu, Xiang Chen, Jing Lei, Wei Wang, Xiaofeng Pan, Lingfeng Pan, Jiangyong Huang, Qianqian Zhang, Zichen |
| description | In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide（RGO） fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors. |
| doi_str_mv | 10.1007/s40820-016-0083-7 |
| format | Article |
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A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide（RGO） fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.</description><identifier>ISSN: 2150-5551</identifier><identifier>ISSN: 2311-6706</identifier><identifier>EISSN: 2150-5551</identifier><identifier>DOI: 10.1007/s40820-016-0083-7</identifier><identifier>PMID: 30460284</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>dots;Reduced ; Engineering ; graphene ; Nanoscale Science and Technology ; Nanotechnology ; Nanotechnology and Microengineering ; nanowires ; oxide;ZnO ; Thin-film ; transistor;Quantum</subject><ispartof>Nano-micro letters, 2016, Vol.8 (3), p.247-253</ispartof><rights>The Author(s) 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c518t-533d0e0a226ba0fb5adceb4bb58ca18f878f8d19945f20834ea63c3840f9071c3</citedby><cites>FETCH-LOGICAL-c518t-533d0e0a226ba0fb5adceb4bb58ca18f878f8d19945f20834ea63c3840f9071c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86067X/86067X.jpg</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223684/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223684/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,27924,27925,41120,41488,42189,42557,51319,51576,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/30460284$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Tao, Zhi</creatorcontrib><creatorcontrib>Huang, Yi-an</creatorcontrib><creatorcontrib>Liu, Xiang</creatorcontrib><creatorcontrib>Chen, Jing</creatorcontrib><creatorcontrib>Lei, Wei</creatorcontrib><creatorcontrib>Wang, Xiaofeng</creatorcontrib><creatorcontrib>Pan, Lingfeng</creatorcontrib><creatorcontrib>Pan, Jiangyong</creatorcontrib><creatorcontrib>Huang, Qianqian</creatorcontrib><creatorcontrib>Zhang, Zichen</creatorcontrib><title>High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires</title><title>Nano-micro letters</title><addtitle>Nano-Micro Lett</addtitle><addtitle>Nano-Micro Letters</addtitle><description>In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide（RGO） fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.</description><subject>dots;Reduced</subject><subject>Engineering</subject><subject>graphene</subject><subject>Nanoscale Science and Technology</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><subject>nanowires</subject><subject>oxide;ZnO</subject><subject>Thin-film</subject><subject>transistor;Quantum</subject><issn>2150-5551</issn><issn>2311-6706</issn><issn>2150-5551</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9UUtv1DAQjhCIVqU_gAvKkYvp-BnnggQt2yIVtqDlwsVyHGfjKrG3dgLtmT-Ol11W5YIlyyN_jxnNVxQvMbzBANVZYiAJIMACAUiKqifFMcEcEOccP31UHxWnKd3C9lRQCXheHFFgAohkx8WvK7fu0Y2NXYij9saWN32YAvoU2nnQk23LVe88WrhhLFdR--TSFGL5XqcMBV9-mbWf5rFsw5TOvtp2Nvn_MupNb70tl_euteUi6vVo_YQurAnxj-l3vyw_ax9-umjTi-JZp4dkT_fvSfFt8WF1foWul5cfz99dI8OxnBCntAULmhDRaOgarltjG9Y0XBqNZSerfFtc14x3JG-EWS2ooZJBV0OFDT0p3u58N3Mz2iz2U9SD2kQ36viggnbqX8S7Xq3DDyUIoUKybPB6bxDD3WzTpEaXjB0G7W2YkyKYCs5qRkSm4h3VxJBStN2hDQa1zU_t8lM5P7XNT1VZ8-rxfAfF37QygewIKUN-baO6DXP0eWf_daX7Sfrg13dZdzCupOCVrGoOTLKaMyY5zpXkjP4GZrS3Fg</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>Tao, Zhi</creator><creator>Huang, Yi-an</creator><creator>Liu, Xiang</creator><creator>Chen, Jing</creator><creator>Lei, Wei</creator><creator>Wang, Xiaofeng</creator><creator>Pan, Lingfeng</creator><creator>Pan, Jiangyong</creator><creator>Huang, Qianqian</creator><creator>Zhang, Zichen</creator><general>Springer Berlin Heidelberg</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>2016</creationdate><title>High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires</title><author>Tao, Zhi ; Huang, Yi-an ; Liu, Xiang ; Chen, Jing ; Lei, Wei ; Wang, Xiaofeng ; Pan, Lingfeng ; Pan, Jiangyong ; Huang, Qianqian ; Zhang, Zichen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c518t-533d0e0a226ba0fb5adceb4bb58ca18f878f8d19945f20834ea63c3840f9071c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>dots;Reduced</topic><topic>Engineering</topic><topic>graphene</topic><topic>Nanoscale Science and Technology</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><topic>nanowires</topic><topic>oxide;ZnO</topic><topic>Thin-film</topic><topic>transistor;Quantum</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tao, Zhi</creatorcontrib><creatorcontrib>Huang, Yi-an</creatorcontrib><creatorcontrib>Liu, Xiang</creatorcontrib><creatorcontrib>Chen, Jing</creatorcontrib><creatorcontrib>Lei, Wei</creatorcontrib><creatorcontrib>Wang, Xiaofeng</creatorcontrib><creatorcontrib>Pan, Lingfeng</creatorcontrib><creatorcontrib>Pan, Jiangyong</creatorcontrib><creatorcontrib>Huang, Qianqian</creatorcontrib><creatorcontrib>Zhang, Zichen</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>Springer Nature OA Free Journals</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Nano-micro letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tao, Zhi</au><au>Huang, Yi-an</au><au>Liu, Xiang</au><au>Chen, Jing</au><au>Lei, Wei</au><au>Wang, Xiaofeng</au><au>Pan, Lingfeng</au><au>Pan, Jiangyong</au><au>Huang, Qianqian</au><au>Zhang, Zichen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires</atitle><jtitle>Nano-micro letters</jtitle><stitle>Nano-Micro Lett</stitle><addtitle>Nano-Micro Letters</addtitle><date>2016</date><risdate>2016</risdate><volume>8</volume><issue>3</issue><spage>247</spage><epage>253</epage><pages>247-253</pages><issn>2150-5551</issn><issn>2311-6706</issn><eissn>2150-5551</eissn><abstract>In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide（RGO） fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. 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| subjects | dots Reduced Engineering graphene Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering nanowires oxide ZnO Thin-film transistor Quantum |
| title | High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires |
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