Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufactur...

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Veröffentlicht in:	Scientific reports 2018-07, Vol.8 (1), p.1-11, Article 11160
Hauptverfasser:	Grossi, Alessandro, Perez, Eduardo, Zambelli, Cristian, Olivo, Piero, Miranda, Enrique, Roelofs, Robin, Woodruff, Jacob, Raisanen, Petri, Li, Wei, Givens, Michael, Costina, Ioan, Schubert, Markus Andreas, Wenger, Christian
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301 639/301/1005/1007 Annealing Carbon Humanities and Social Sciences Integration multidisciplinary Science Science (multidisciplinary)
Online-Zugang:	Volltext
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