Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

Recent development of group-IV alloy GeSn indicates its bright future for the application of mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. However, its crystal growth remains a great challenge. In this...

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Veröffentlicht in:	Scientific reports 2018-04, Vol.8 (1), p.5640-11, Article 5640
Hauptverfasser:	Dou, Wei, Benamara, Mourad, Mosleh, Aboozar, Margetis, Joe, Grant, Perry, Zhou, Yiyin, Al-Kabi, Sattar, Du, Wei, Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing
Format:	Artikel
Sprache:	eng
Schlagworte:	140/125 639/166/987 639/301/1019 639/638/298/398 Chemical reactions Chemical vapor deposition Dislocation Electrical engineering Free energy Humanities and Social Sciences Misfit dislocations Molecular beam epitaxy multidisciplinary Photonics Science Science (multidisciplinary)
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