Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS2 films

Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabr...

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Veröffentlicht in:	Scientific reports 2018-02, Vol.8 (1), p.1-9, Article 3412
Hauptverfasser:	Afzal, Amir Muhammad, Khan, Muhammad Farooq, Nazir, Ghazanfar, Dastgeer, Ghulam, Aftab, Sikandar, Akhtar, Imtisal, Seo, Yongho, Eom, Jonghwa
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/119/995 639/766/119/995 639/925/918/1052 Graphene Humanities and Social Sciences Low temperature multidisciplinary Oscillations Science Science (multidisciplinary)
Online-Zugang:	Volltext
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