Probing spatial heterogeneity in silicon thin films by Raman spectroscopy
Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity...
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| Veröffentlicht in: | Scientific reports 2017-11, Vol.7 (1), p.16549-8, Article 16549 |
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| creator | Yamazaki, Hideyuki Koike, Mitsuo Saitoh, Masumi Tomita, Mitsuhiro Yokogawa, Ryo Sawamoto, Naomi Tomita, Motohiro Kosemura, Daisuke Ogura, Atsushi |
| description | Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals. |
| doi_str_mv | 10.1038/s41598-017-16724-4 |
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Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. 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Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>29185465</pmid><doi>10.1038/s41598-017-16724-4</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | 140/133 639/301/357/354 639/925/930/12 Crystals Data acquisition Heterogeneity Humanities and Social Sciences multidisciplinary Nanocrystals Raman spectroscopy Science Science (multidisciplinary) Silicon Spatial distribution Spatial heterogeneity Spectroscopy Spectrum analysis Thin films |
| title | Probing spatial heterogeneity in silicon thin films by Raman spectroscopy |
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