Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short chann...

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Veröffentlicht in:	Scientific reports 2017-10, Vol.7 (1), p.13205-7, Article 13205
Hauptverfasser:	Min Lee, Seung, Hwan Yum, Jung, Larsen, Eric S., Chul Lee, Woo, Keun Kim, Seong, Bielawski, Christopher W., Oh, Jungwoo
Format:	Artikel
Sprache:	eng
Schlagworte:	132/122 140/133 140/146 639/301/1005/1007 639/301/1023/1024 Beryllium Capacitance Fabrication Humanities and Social Sciences multidisciplinary Science Science (multidisciplinary) Silicon Silicon oxide Thermal conductivity
Online-Zugang:	Volltext
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