Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS 2 field-effect transistors. The negative differential conduct...

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Veröffentlicht in:Scientific reports 2017-09, Vol.7 (1), p.11256-9, Article 11256
Hauptverfasser: He, G., Nathawat, J., Kwan, C.-P., Ramamoorthy, H., Somphonsane, R., Zhao, M., Ghosh, K., Singisetti, U., Perea-López, N., Zhou, C., Elías, A. L., Terrones, M., Gong, Y., Zhang, X., Vajtai, R., Ajayan, P. M., Ferry, D. K., Bird, J. P.
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Sprache:eng
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