Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics
Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a t...
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Veröffentlicht in: | Science advances 2017-08, Vol.3 (8), p.e1701008-e1701008 |
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creator | Zhang, Zhuolei Li, Peng-Fei Tang, Yuan-Yuan Wilson, Andrew J Willets, Katherine Wuttig, Manfred Xiong, Ren-Gen Ren, Shenqiang |
description | Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO
thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of (2,[Formula: see text],0) and (1,0,[Formula: see text]) structural variants of
3
symmetry with a reversible polarization of 6.7 μC/cm
. The resulting ferroelectric domain structure leads to a reversible electromechanical response of
= 38.8 pm/V. Polarization switching results in a change of the refractive index,
, of single domains, [Formula: see text]. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies. |
doi_str_mv | 10.1126/sciadv.1701008 |
format | Article |
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thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of (2,[Formula: see text],0) and (1,0,[Formula: see text]) structural variants of
3
symmetry with a reversible polarization of 6.7 μC/cm
. The resulting ferroelectric domain structure leads to a reversible electromechanical response of
= 38.8 pm/V. Polarization switching results in a change of the refractive index,
, of single domains, [Formula: see text]. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies.</description><identifier>ISSN: 2375-2548</identifier><identifier>EISSN: 2375-2548</identifier><identifier>DOI: 10.1126/sciadv.1701008</identifier><identifier>PMID: 28875167</identifier><language>eng</language><publisher>United States: AAAS</publisher><subject>Engineering ; MATERIALS SCIENCE ; Physical Sciences ; SciAdv r-articles</subject><ispartof>Science advances, 2017-08, Vol.3 (8), p.e1701008-e1701008</ispartof><rights>Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). 2017 The Authors</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c483t-a58bdcd0f2e068b596b9ff153da9d8d8ae44707bf4c28896acc6a1011f8883943</citedby><cites>FETCH-LOGICAL-c483t-a58bdcd0f2e068b596b9ff153da9d8d8ae44707bf4c28896acc6a1011f8883943</cites><orcidid>0000-0003-2364-0193 ; 0000-0003-3427-810X ; 000000033427810X ; 0000000323640193</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5576882/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5576882/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,27924,27925,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/28875167$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/servlets/purl/1429329$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Zhuolei</creatorcontrib><creatorcontrib>Li, Peng-Fei</creatorcontrib><creatorcontrib>Tang, Yuan-Yuan</creatorcontrib><creatorcontrib>Wilson, Andrew J</creatorcontrib><creatorcontrib>Willets, Katherine</creatorcontrib><creatorcontrib>Wuttig, Manfred</creatorcontrib><creatorcontrib>Xiong, Ren-Gen</creatorcontrib><creatorcontrib>Ren, Shenqiang</creatorcontrib><creatorcontrib>Temple Univ., Philadelphia, PA (United States)</creatorcontrib><title>Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics</title><title>Science advances</title><addtitle>Sci Adv</addtitle><description>Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO
thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of (2,[Formula: see text],0) and (1,0,[Formula: see text]) structural variants of
3
symmetry with a reversible polarization of 6.7 μC/cm
. The resulting ferroelectric domain structure leads to a reversible electromechanical response of
= 38.8 pm/V. Polarization switching results in a change of the refractive index,
, of single domains, [Formula: see text]. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies.</description><subject>Engineering</subject><subject>MATERIALS SCIENCE</subject><subject>Physical Sciences</subject><subject>SciAdv r-articles</subject><issn>2375-2548</issn><issn>2375-2548</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNpVUc9LHTEQDsVS5dVrj2Xx5GWf-bHJZi-CiG0FoRd76iHMZic1si95Jlmh_31T9ikKA5lJvvnmm3yEfGF0yxhXF9l6mJ63rKeMUv2BnHDRy5bLTh-9yY_Jac6PlFLWKSXZ8Ikcc617yVR_Qn7fLwHGGRuc0ZYUE2afCwSLDYTp5baN--Jtg87VMjfRNSVByHtIGEqzixW1zJAahynFtcfb_Jl8dDBnPD2cG_Lr28399Y_27uf32-uru9Z2WpQWpB4nO1HHkSo9ykGNg3NMigmGSU8asOt62o-us1X3oMBaBYwy5rTWYujEhlyuvPtl3OFkq6YEs9knv4P010Tw5v1L8A_mT3w2UvZKa14JzlaCmIs39VcL2gcbQ6iLGNbxQdTYkPPDlBSfFszF7Hy2OM8QMC7ZsEEoriQXskK3K9SmmHNC96qFUfPfObM6Zw7O1Yavbzd4hb_4JP4BlsWYMQ</recordid><startdate>20170801</startdate><enddate>20170801</enddate><creator>Zhang, Zhuolei</creator><creator>Li, Peng-Fei</creator><creator>Tang, Yuan-Yuan</creator><creator>Wilson, Andrew J</creator><creator>Willets, Katherine</creator><creator>Wuttig, Manfred</creator><creator>Xiong, Ren-Gen</creator><creator>Ren, Shenqiang</creator><general>AAAS</general><general>American Association for the Advancement of Science</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OIOZB</scope><scope>OTOTI</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0003-2364-0193</orcidid><orcidid>https://orcid.org/0000-0003-3427-810X</orcidid><orcidid>https://orcid.org/000000033427810X</orcidid><orcidid>https://orcid.org/0000000323640193</orcidid></search><sort><creationdate>20170801</creationdate><title>Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics</title><author>Zhang, Zhuolei ; Li, Peng-Fei ; Tang, Yuan-Yuan ; Wilson, Andrew J ; Willets, Katherine ; Wuttig, Manfred ; Xiong, Ren-Gen ; Ren, Shenqiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c483t-a58bdcd0f2e068b596b9ff153da9d8d8ae44707bf4c28896acc6a1011f8883943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Engineering</topic><topic>MATERIALS SCIENCE</topic><topic>Physical Sciences</topic><topic>SciAdv r-articles</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Zhuolei</creatorcontrib><creatorcontrib>Li, Peng-Fei</creatorcontrib><creatorcontrib>Tang, Yuan-Yuan</creatorcontrib><creatorcontrib>Wilson, Andrew J</creatorcontrib><creatorcontrib>Willets, Katherine</creatorcontrib><creatorcontrib>Wuttig, Manfred</creatorcontrib><creatorcontrib>Xiong, Ren-Gen</creatorcontrib><creatorcontrib>Ren, Shenqiang</creatorcontrib><creatorcontrib>Temple Univ., Philadelphia, PA (United States)</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Science advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Zhuolei</au><au>Li, Peng-Fei</au><au>Tang, Yuan-Yuan</au><au>Wilson, Andrew J</au><au>Willets, Katherine</au><au>Wuttig, Manfred</au><au>Xiong, Ren-Gen</au><au>Ren, Shenqiang</au><aucorp>Temple Univ., Philadelphia, PA (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics</atitle><jtitle>Science advances</jtitle><addtitle>Sci Adv</addtitle><date>2017-08-01</date><risdate>2017</risdate><volume>3</volume><issue>8</issue><spage>e1701008</spage><epage>e1701008</epage><pages>e1701008-e1701008</pages><issn>2375-2548</issn><eissn>2375-2548</eissn><abstract>Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO
thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of (2,[Formula: see text],0) and (1,0,[Formula: see text]) structural variants of
3
symmetry with a reversible polarization of 6.7 μC/cm
. The resulting ferroelectric domain structure leads to a reversible electromechanical response of
= 38.8 pm/V. Polarization switching results in a change of the refractive index,
, of single domains, [Formula: see text]. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies.</abstract><cop>United States</cop><pub>AAAS</pub><pmid>28875167</pmid><doi>10.1126/sciadv.1701008</doi><orcidid>https://orcid.org/0000-0003-2364-0193</orcidid><orcidid>https://orcid.org/0000-0003-3427-810X</orcidid><orcidid>https://orcid.org/000000033427810X</orcidid><orcidid>https://orcid.org/0000000323640193</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Engineering MATERIALS SCIENCE Physical Sciences SciAdv r-articles |
title | Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics |
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