Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth

Improvements in the overall efficiency and significant reduction in the efficiency droop are observed in three-dimensional (3D) GaN truncated pyramid structures fabricated with air void and a SiO 2 layer. This 3D structure was fabricated using a self-aligned twofold epitaxial lateral overgrowth tech...

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Veröffentlicht in:	Scientific reports 2017-08, Vol.7 (1), p.9663-8, Article 9663
Hauptverfasser:	Yoo, Yang-Seok, Song, Hyun Gyu, Jang, Min-Ho, Lee, Sang-Won, Cho, Yong-Hoon
Format:	Artikel
Sprache:	eng
Schlagworte:	140/125 639/301/1019/1020/1091 639/301/1023/1024 639/624/1020/1091 Efficiency Emissions Humanities and Social Sciences Light emitting diodes multidisciplinary Science Science (multidisciplinary) Silicon dioxide
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