Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
Improvements in the overall efficiency and significant reduction in the efficiency droop are observed in three-dimensional (3D) GaN truncated pyramid structures fabricated with air void and a SiO 2 layer. This 3D structure was fabricated using a self-aligned twofold epitaxial lateral overgrowth tech...
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| Veröffentlicht in: | Scientific reports 2017-08, Vol.7 (1), p.9663-8, Article 9663 |
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| creator | Yoo, Yang-Seok Song, Hyun Gyu Jang, Min-Ho Lee, Sang-Won Cho, Yong-Hoon |
| description | Improvements in the overall efficiency and significant reduction in the efficiency droop are observed in three-dimensional (3D) GaN truncated pyramid structures fabricated with air void and a SiO
2
layer. This 3D structure was fabricated using a self-aligned twofold epitaxial lateral overgrowth technique, which improved both the internal quantum efficiency and the light extraction efficiency. In addition, a reduced leakage current was observed due to the effective suppression of threading dislocations. While this study focuses primarily on the blue emission wavelength region, this approach can also be applied to overcome the efficiency degradation problem in the ultraviolet, green, and red emission regions. |
| doi_str_mv | 10.1038/s41598-017-10086-7 |
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| subjects | 140/125 639/301/1019/1020/1091 639/301/1023/1024 639/624/1020/1091 Efficiency Emissions Humanities and Social Sciences Light emitting diodes multidisciplinary Science Science (multidisciplinary) Silicon dioxide |
| title | Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth |
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