The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned S...

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Veröffentlicht in:Materials 2016-06, Vol.9 (7), p.534-534
Hauptverfasser: Chang, Wen-Chung, Su, Sheng-Chien, Wu, Chia-Ching
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Sprache:eng
Schlagworte:
Alignment
Aqueous solutions
Arrays
Diodes
Etching
Heterojunctions
Indium tin oxide
Indium tin oxides
Nanowires
Scanning electron microscopy
Silicon
Silver
Volt-ampere characteristics
Zinc oxides
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Su, Sheng-Chien
Wu, Chia-Ching
description Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current-voltage (I-V) measurements. Nonlinear and rectifying I-V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.
doi_str_mv 10.3390/ma9070534
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subjects Alignment
Aqueous solutions
Arrays
Diodes
Etching
Heterojunctions
Indium tin oxide
Indium tin oxides
Nanowires
Scanning electron microscopy
Silicon
Silver
Volt-ampere characteristics
Zinc oxides
title The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
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