Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside th...

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Veröffentlicht in:	Scientific reports 2017-03, Vol.7 (1), p.42962-42962, Article 42962
Hauptverfasser:	Wang, Sheng-Wen, Hong, Kuo-Bin, Tsai, Yu-Lin, Teng, Chu-Hsiang, Tzou, An-Jye, Chu, You-Chen, Lee, Po-Tsung, Ku, Pei-Cheng, Lin, Chien-Chung, Kuo, Hao-Chung
Format:	Artikel
Sprache:	eng
Schlagworte:	639/624/1020/1089 639/624/1111/1114 Humanities and Social Sciences multidisciplinary Science
Online-Zugang:	Volltext
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