Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires

A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Elec...

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Veröffentlicht in:ACS applied materials & interfaces 2016-10, Vol.8 (39), p.26198-26206
Hauptverfasser: Zhang, Hezhi, Dai, Xing, Guan, Nan, Messanvi, Agnes, Neplokh, Vladimir, Piazza, Valerio, Vallo, Martin, Bougerol, Catherine, Julien, François H, Babichev, Andrey, Cavassilas, Nicolas, Bescond, Marc, Michelini, Fabienne, Foldyna, Martin, Gautier, Eric, Durand, Christophe, Eymery, Joël, Tchernycheva, Maria
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Sprache:eng
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Zusammenfassung:A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b06414