Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure
A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H 2 O 2 ) detection than those of the bare SiO 2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher G...
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| Veröffentlicht in: | Nanoscale research letters 2016-09, Vol.11 (1) |
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| creator | Kumar, Pankaj Maikap, Siddheswar Qiu, Jian-Tai Jana, Surajit Roy, Anisha Singh, Kanishk Cheng, Hsin-Ming Chang, Mu-Tung Mahapatra, Rajat Chiu, Hsien-Chin Yang, Jer-Ren |
| description | A 15-nm-thick GdO
x
membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H
2
O
2
) detection than those of the bare SiO
2
and 3-nm-thick GdO
x
membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO
x
films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO
x
membrane, polycrystalline grain has lower energy gap and Gd
2+
oxidation states lead to change Gd
3+
states in the presence of H
2
O
2
, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO
x
membrane with higher Gd content are responsible for detecting H
2
O
2
whereas both bare SiO
2
and thinner GdO
x
membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H
2
O
2
concentration from 1 to 200 μM owing to more generation of Gd
3+
ions, and the H
2
O
2
sensing mechanism has been explained as well. |
| doi_str_mv | 10.1186/s11671-016-1657-5 |
| format | Article |
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x
membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H
2
O
2
) detection than those of the bare SiO
2
and 3-nm-thick GdO
x
membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO
x
films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO
x
membrane, polycrystalline grain has lower energy gap and Gd
2+
oxidation states lead to change Gd
3+
states in the presence of H
2
O
2
, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO
x
membrane with higher Gd content are responsible for detecting H
2
O
2
whereas both bare SiO
2
and thinner GdO
x
membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H
2
O
2
concentration from 1 to 200 μM owing to more generation of Gd
3+
ions, and the H
2
O
2
sensing mechanism has been explained as well.</description><identifier>ISSN: 1931-7573</identifier><identifier>EISSN: 1556-276X</identifier><identifier>DOI: 10.1186/s11671-016-1657-5</identifier><identifier>PMID: 27680740</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Chemistry and Materials Science ; Materials Science ; Molecular Medicine ; Nano Express ; Nanochemistry ; Nanoscale Science and Technology ; Nanotechnology ; Nanotechnology and Microengineering</subject><ispartof>Nanoscale research letters, 2016-09, Vol.11 (1)</ispartof><rights>The Author(s). 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-p253t-f199cf7078d1022c152d4b0f3380af072d17e8f70cd6ca698e7a6b3d6dc8ff633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5040652/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5040652/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,860,881,27901,27902,53766,53768</link.rule.ids></links><search><creatorcontrib>Kumar, Pankaj</creatorcontrib><creatorcontrib>Maikap, Siddheswar</creatorcontrib><creatorcontrib>Qiu, Jian-Tai</creatorcontrib><creatorcontrib>Jana, Surajit</creatorcontrib><creatorcontrib>Roy, Anisha</creatorcontrib><creatorcontrib>Singh, Kanishk</creatorcontrib><creatorcontrib>Cheng, Hsin-Ming</creatorcontrib><creatorcontrib>Chang, Mu-Tung</creatorcontrib><creatorcontrib>Mahapatra, Rajat</creatorcontrib><creatorcontrib>Chiu, Hsien-Chin</creatorcontrib><creatorcontrib>Yang, Jer-Ren</creatorcontrib><title>Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure</title><title>Nanoscale research letters</title><addtitle>Nanoscale Res Lett</addtitle><description>A 15-nm-thick GdO
x
membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H
2
O
2
) detection than those of the bare SiO
2
and 3-nm-thick GdO
x
membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO
x
films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO
x
membrane, polycrystalline grain has lower energy gap and Gd
2+
oxidation states lead to change Gd
3+
states in the presence of H
2
O
2
, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO
x
membrane with higher Gd content are responsible for detecting H
2
O
2
whereas both bare SiO
2
and thinner GdO
x
membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H
2
O
2
concentration from 1 to 200 μM owing to more generation of Gd
3+
ions, and the H
2
O
2
sensing mechanism has been explained as well.</description><subject>Chemistry and Materials Science</subject><subject>Materials Science</subject><subject>Molecular Medicine</subject><subject>Nano Express</subject><subject>Nanochemistry</subject><subject>Nanoscale Science and Technology</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><issn>1931-7573</issn><issn>1556-276X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNpVUctOwzAQtBCIlscHcPMPGPyo7fSChEofSEU9FCRulmNv2lSJUzkJohz4dgzlwmlnZ3ZHIw1CN4zeMpapu5YxpRmhTBGmpCbyBA2ZlIpwrd5OEx4LRrTUYoAu2nZH6UhTrc7RIOkZ1SM6RF-P0IHryibgpsD7BbbB42n4PNRAZhEAL_iK4zWEtgwb_Axua0PZ1jg_4Ndfau5XH4mv82gD4DLgaZX8YlMdOiBPoe0r2zWRrKEuXRN879KG111MoI9whc4KW7Vw_Tcv0ets-jJZkOVq_jR5WJI9l6IjBRuPXZHCZ55Rzh2T3I9yWgiRUVtQzT3TkKUD55WzapyBtioXXnmXFYUS4hLdH333fV6DdxC6aCuzj2Vt48E0tjT_lVBuzaZ5N5KOqJI8GfCjQZt-wgai2TV9DCmzYdT8tGGObZjUhvlpw0jxDRn2fuw</recordid><startdate>20160929</startdate><enddate>20160929</enddate><creator>Kumar, Pankaj</creator><creator>Maikap, Siddheswar</creator><creator>Qiu, Jian-Tai</creator><creator>Jana, Surajit</creator><creator>Roy, Anisha</creator><creator>Singh, Kanishk</creator><creator>Cheng, Hsin-Ming</creator><creator>Chang, Mu-Tung</creator><creator>Mahapatra, Rajat</creator><creator>Chiu, Hsien-Chin</creator><creator>Yang, Jer-Ren</creator><general>Springer US</general><scope>C6C</scope><scope>5PM</scope></search><sort><creationdate>20160929</creationdate><title>Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure</title><author>Kumar, Pankaj ; Maikap, Siddheswar ; Qiu, Jian-Tai ; Jana, Surajit ; Roy, Anisha ; Singh, Kanishk ; Cheng, Hsin-Ming ; Chang, Mu-Tung ; Mahapatra, Rajat ; Chiu, Hsien-Chin ; Yang, Jer-Ren</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p253t-f199cf7078d1022c152d4b0f3380af072d17e8f70cd6ca698e7a6b3d6dc8ff633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Chemistry and Materials Science</topic><topic>Materials Science</topic><topic>Molecular Medicine</topic><topic>Nano Express</topic><topic>Nanochemistry</topic><topic>Nanoscale Science and Technology</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar, Pankaj</creatorcontrib><creatorcontrib>Maikap, Siddheswar</creatorcontrib><creatorcontrib>Qiu, Jian-Tai</creatorcontrib><creatorcontrib>Jana, Surajit</creatorcontrib><creatorcontrib>Roy, Anisha</creatorcontrib><creatorcontrib>Singh, Kanishk</creatorcontrib><creatorcontrib>Cheng, Hsin-Ming</creatorcontrib><creatorcontrib>Chang, Mu-Tung</creatorcontrib><creatorcontrib>Mahapatra, Rajat</creatorcontrib><creatorcontrib>Chiu, Hsien-Chin</creatorcontrib><creatorcontrib>Yang, Jer-Ren</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Nanoscale research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar, Pankaj</au><au>Maikap, Siddheswar</au><au>Qiu, Jian-Tai</au><au>Jana, Surajit</au><au>Roy, Anisha</au><au>Singh, Kanishk</au><au>Cheng, Hsin-Ming</au><au>Chang, Mu-Tung</au><au>Mahapatra, Rajat</au><au>Chiu, Hsien-Chin</au><au>Yang, Jer-Ren</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure</atitle><jtitle>Nanoscale research letters</jtitle><stitle>Nanoscale Res Lett</stitle><date>2016-09-29</date><risdate>2016</risdate><volume>11</volume><issue>1</issue><issn>1931-7573</issn><eissn>1556-276X</eissn><abstract>A 15-nm-thick GdO
x
membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H
2
O
2
) detection than those of the bare SiO
2
and 3-nm-thick GdO
x
membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO
x
films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO
x
membrane, polycrystalline grain has lower energy gap and Gd
2+
oxidation states lead to change Gd
3+
states in the presence of H
2
O
2
, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO
x
membrane with higher Gd content are responsible for detecting H
2
O
2
whereas both bare SiO
2
and thinner GdO
x
membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H
2
O
2
concentration from 1 to 200 μM owing to more generation of Gd
3+
ions, and the H
2
O
2
sensing mechanism has been explained as well.</abstract><cop>New York</cop><pub>Springer US</pub><pmid>27680740</pmid><doi>10.1186/s11671-016-1657-5</doi><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central; Free Full-Text Journals in Chemistry; PubMed Central Open Access |
| subjects | Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering |
| title | Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure |
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