Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer

The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scan...

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Veröffentlicht in:	Scientific reports 2016-09, Vol.6 (1), p.33487-33487, Article 33487
Hauptverfasser:	Pierucci, Debora, Brumme, Thomas, Girard, Jean-Christophe, Calandra, Matteo, Silly, Mathieu G., Sirotti, Fausto, Barbier, Antoine, Mauri, Francesco, Ouerghi, Abdelkarim
Format:	Artikel
Sprache:	eng
Schlagworte:	140/146 639/301/357/995 639/925/918/1052 Condensed Matter Humanities and Social Sciences multidisciplinary Physics Science Spectroscopy Spectrum analysis Stacking
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