Dual-mode operation of 2D material-base hot electron transistors

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS 2 , in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron...

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Veröffentlicht in:	Scientific reports 2016-09, Vol.6 (1), p.32503-32503, Article 32503
Hauptverfasser:	Lan, Yann-Wen, Torres, Jr, Carlos M., Zhu, Xiaodan, Qasem, Hussam, Adleman, James R., Lerner, Mitchell B., Tsai, Shin-Hung, Shi, Yumeng, Li, Lain-Jong, Yeh, Wen-Kuan, Wang, Kang L.
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1007 639/925/927/1007 Humanities and Social Sciences multidisciplinary Polarity Science Science (multidisciplinary) Temperature effects Transistors
Online-Zugang:	Volltext
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