Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances
We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limit...
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| Veröffentlicht in: | Nanoscale research letters 2016-12, Vol.11 (1), p.355-7, Article 355 |
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| creator | van Sebille, Martijn Allebrandi, Jort Quik, Jim van Swaaij, René A.C. M. M. Tichelaar, Frans D. Zeman, Miro |
| description | We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step. |
| doi_str_mv | 10.1186/s11671-016-1567-6 |
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M. M.</creatorcontrib><creatorcontrib>Tichelaar, Frans D.</creatorcontrib><creatorcontrib>Zeman, Miro</creatorcontrib><title>Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances</title><title>Nanoscale research letters</title><addtitle>Nanoscale Res Lett</addtitle><addtitle>Nanoscale Res Lett</addtitle><description>We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.</description><subject>Annealing</subject><subject>Chemistry and Materials Science</subject><subject>Density</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Molecular Medicine</subject><subject>Nano Express</subject><subject>Nanochemistry</subject><subject>Nanocrystals</subject><subject>Nanoscale Science and Technology</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><subject>Optimization</subject><subject>Silicon</subject><subject>Silicon oxides</subject><subject>Stoichiometry</subject><issn>1931-7573</issn><issn>1556-276X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNkk-LFDEQxRtR3HX1A3iRBi9eolVJJzV9EWRddWHZOajgLeTfjFm602PSs7h-ejPMOqyCsKeEql9eUS-vaZ4jvEZcqDcFUREyQMVQKmLqQXOMUirGSX17WO-9QEaSxFHzpJQrgI6A1OPmiFPX8070x83lcjPHMf6Kad1-jkN0U2qXP6MP7dlog_fBH8qXJk0u35TZDO15mkNmG5Pn6IbQvo-1mlwoT5tHKzOU8Oz2PGm-fjj7cvqJXSw_np--u2BOCjUz20nwnaSFUwgIICQXwVLwAUAp6wUFaxyX3DjvFaIV1nHouJHGr3orxEnzdq-72doxeBfSnM2gNzmOJt_oyUT9dyfF73o9Xeuup46jrAKvbgXy9GMbyqzHWFwYBpPCtC0aF6IaCVziPVCUBIrTfVDoFZDoVUVf_oNeTducqmmVkgviRLDbE_eUy1MpOawOKyLoXQb0PgO6ZkDvMqB3yi_uenN48efTK8D3QKmttA75zuj_qv4GBSi8UA</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>van Sebille, Martijn</creator><creator>Allebrandi, Jort</creator><creator>Quik, Jim</creator><creator>van Swaaij, René A.C. 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M. ; Tichelaar, Frans D. ; Zeman, Miro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c536t-b450d4578c6101003523eb7ede0066bd37ebac252acdd611b3bc2042a5adf9b33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Annealing</topic><topic>Chemistry and Materials Science</topic><topic>Density</topic><topic>Materials Science</topic><topic>Mathematical analysis</topic><topic>Molecular Medicine</topic><topic>Nano Express</topic><topic>Nanochemistry</topic><topic>Nanocrystals</topic><topic>Nanoscale Science and Technology</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><topic>Optimization</topic><topic>Silicon</topic><topic>Silicon oxides</topic><topic>Stoichiometry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>van Sebille, Martijn</creatorcontrib><creatorcontrib>Allebrandi, Jort</creatorcontrib><creatorcontrib>Quik, Jim</creatorcontrib><creatorcontrib>van Swaaij, René A.C. 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| source | DOAJ Directory of Open Access Journals; PubMed Central Open Access; EZB-FREE-00999 freely available EZB journals; PubMed Central; Free Full-Text Journals in Chemistry |
| subjects | Annealing Chemistry and Materials Science Density Materials Science Mathematical analysis Molecular Medicine Nano Express Nanochemistry Nanocrystals Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Optimization Silicon Silicon oxides Stoichiometry |
| title | Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances |
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