Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator...

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Veröffentlicht in:	Scientific reports 2016-08, Vol.6 (1), p.30646-30646, Article 30646
Hauptverfasser:	Jung, Sungchul, Jeon, Youngeun, Jin, Hanbyul, Lee, Jung-Yong, Ko, Jae-Hyeon, Kim, Nam, Eom, Daejin, Park, Kibog
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1007 639/766/1130/2798 639/766/119/996 639/925/927/1007 Electronics industry Humanities and Social Sciences Metals multidisciplinary Polarization Random access memory Science Thin films
Online-Zugang:	Volltext
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