Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields
An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator...
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| Veröffentlicht in: | Scientific reports 2016-08, Vol.6 (1), p.30646-30646, Article 30646 |
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| creator | Jung, Sungchul Jeon, Youngeun Jin, Hanbyul Lee, Jung-Yong Ko, Jae-Hyeon Kim, Nam Eom, Daejin Park, Kibog |
| description | An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. |
| doi_str_mv | 10.1038/srep30646 |
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| subjects | 639/301/1005/1007 639/766/1130/2798 639/766/119/996 639/925/927/1007 Electronics industry Humanities and Social Sciences Metals multidisciplinary Polarization Random access memory Science Thin films |
| title | Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields |
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