Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene
We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer be...
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| Veröffentlicht in: | Scientific reports 2016-07, Vol.6 (1), p.30210-30210, Article 30210 |
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| creator | Shautsova, Viktoryia Gilbertson, Adam M. Black, Nicola C. G. Maier, Stefan A. Cohen, Lesley F. |
| description | We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO
2
/Si, SAM-modified and hBN covered SiO
2
/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping. |
| doi_str_mv | 10.1038/srep30210 |
| format | Article |
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2
/Si, SAM-modified and hBN covered SiO
2
/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep30210</identifier><identifier>PMID: 27443219</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>140/133 ; 142/126 ; 639/301/357/918/1052 ; 639/301/357/918/1053 ; Humanities and Social Sciences ; multidisciplinary ; Science</subject><ispartof>Scientific reports, 2016-07, Vol.6 (1), p.30210-30210, Article 30210</ispartof><rights>The Author(s) 2016</rights><rights>Copyright © 2016, The Author(s) 2016 The Author(s)</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c476t-a6c0e46cd492686e8c6adcb738c26af401f7eca297cbd3cd568168e2204e29a23</citedby><cites>FETCH-LOGICAL-c476t-a6c0e46cd492686e8c6adcb738c26af401f7eca297cbd3cd568168e2204e29a23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4957148/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4957148/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,860,881,27901,27902,41096,42165,51551,53766,53768</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27443219$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Shautsova, Viktoryia</creatorcontrib><creatorcontrib>Gilbertson, Adam M.</creatorcontrib><creatorcontrib>Black, Nicola C. G.</creatorcontrib><creatorcontrib>Maier, Stefan A.</creatorcontrib><creatorcontrib>Cohen, Lesley F.</creatorcontrib><title>Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO
2
/Si, SAM-modified and hBN covered SiO
2
/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.</description><subject>140/133</subject><subject>142/126</subject><subject>639/301/357/918/1052</subject><subject>639/301/357/918/1053</subject><subject>Humanities and Social Sciences</subject><subject>multidisciplinary</subject><subject>Science</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNptkU1LAzEQhoMoVrQH_4DkqEI1yabZ3Yug9ROKXrTXMM3Oble2yZrsiv57I61FwbnMwDy88_EScsjZGWdJdh48tgkTnG2RPcHkeCQSIbZ_1QMyDOGVxRiLXPJ8lwxEKmUieL5HZvf4AZWz0NAr552lj3Xn6wIphFCHDgvaebChRE_BFhStgTb0DXR1ZF1JG_BVhD0CncyuaeWhXaDFA7JTQhNwuM775OX25nlyP5o-3T1MLqcjI1PVjUAZhlKZQuZCZQozo6Aw8zTJjFBQSsbLFA2IPDXzIjHFWGVcZSjibShyEMk-uVjptv18iYVBG9dtdOvrJfhP7aDWfzu2XujKvWuZj1MusyhwvBbw7q3H0OllHQw2DVh0fdA8Y0omKc95RE9WqPEuxK-XmzGc6W8r9MaKyB793mtD_jw-AqcrIMSWrdDrV9f7aEP4R-0LofaUGQ</recordid><startdate>20160722</startdate><enddate>20160722</enddate><creator>Shautsova, Viktoryia</creator><creator>Gilbertson, Adam M.</creator><creator>Black, Nicola C. G.</creator><creator>Maier, Stefan A.</creator><creator>Cohen, Lesley F.</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20160722</creationdate><title>Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene</title><author>Shautsova, Viktoryia ; Gilbertson, Adam M. ; Black, Nicola C. G. ; Maier, Stefan A. ; Cohen, Lesley F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c476t-a6c0e46cd492686e8c6adcb738c26af401f7eca297cbd3cd568168e2204e29a23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>140/133</topic><topic>142/126</topic><topic>639/301/357/918/1052</topic><topic>639/301/357/918/1053</topic><topic>Humanities and Social Sciences</topic><topic>multidisciplinary</topic><topic>Science</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shautsova, Viktoryia</creatorcontrib><creatorcontrib>Gilbertson, Adam M.</creatorcontrib><creatorcontrib>Black, Nicola C. G.</creatorcontrib><creatorcontrib>Maier, Stefan A.</creatorcontrib><creatorcontrib>Cohen, Lesley F.</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shautsova, Viktoryia</au><au>Gilbertson, Adam M.</au><au>Black, Nicola C. G.</au><au>Maier, Stefan A.</au><au>Cohen, Lesley F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2016-07-22</date><risdate>2016</risdate><volume>6</volume><issue>1</issue><spage>30210</spage><epage>30210</epage><pages>30210-30210</pages><artnum>30210</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO
2
/Si, SAM-modified and hBN covered SiO
2
/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>27443219</pmid><doi>10.1038/srep30210</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | 140/133 142/126 639/301/357/918/1052 639/301/357/918/1053 Humanities and Social Sciences multidisciplinary Science |
| title | Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene |
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