The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...

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Veröffentlicht in:	Nanoscale research letters 2016-12, Vol.11 (1), p.340-8, Article 340
Hauptverfasser:	Jiao, Qianqian, Chen, Zhizhong, Feng, Yulong, Li, Shunfeng, Jiang, Shengxiang, Li, Junze, Chen, Yifan, Yu, Tongjun, Kang, Xiangning, Shen, Bo, Zhang, Guoyi
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Chemistry and Materials Science Extraction Gallium nitrides Indium gallium nitrides Light-emitting diodes Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanostructure Nanotechnology Nanotechnology and Microengineering Photonic crystals Three dimensional
Online-Zugang:	Volltext
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