Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves
The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly...
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| Veröffentlicht in: | Scientific reports 2016-07, Vol.6 (1), p.29845-29845, Article 29845 |
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| creator | Wong, P. K. Johnny Zhang, Wen Wu, Jing Will, Iain G. Xu, Yongbing Xia, Ke Holmes, Stuart N. Farrer, Ian Beere, Harvey E. Ritchie, Dave A. |
| description | The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias- and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET. |
| doi_str_mv | 10.1038/srep29845 |
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K. Johnny ; Zhang, Wen ; Wu, Jing ; Will, Iain G. ; Xu, Yongbing ; Xia, Ke ; Holmes, Stuart N. ; Farrer, Ian ; Beere, Harvey E. ; Ritchie, Dave A.</creator><creatorcontrib>Wong, P. K. Johnny ; Zhang, Wen ; Wu, Jing ; Will, Iain G. ; Xu, Yongbing ; Xia, Ke ; Holmes, Stuart N. ; Farrer, Ian ; Beere, Harvey E. ; Ritchie, Dave A.</creatorcontrib><description>The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias- and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep29845</identifier><identifier>PMID: 27432047</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/301 ; 639/925 ; Bias ; Data storage ; Diodes ; Electrodes ; Fabrication ; Humanities and Social Sciences ; Injection ; Molecular beam epitaxy ; multidisciplinary ; Science ; Valves</subject><ispartof>Scientific reports, 2016-07, Vol.6 (1), p.29845-29845, Article 29845</ispartof><rights>The Author(s) 2016</rights><rights>Copyright Nature Publishing Group Jul 2016</rights><rights>Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c504t-395625dcd85574102e5fb361fd8067eb11b9a199f6fc7cc6784b1aa1df8142e33</citedby><cites>FETCH-LOGICAL-c504t-395625dcd85574102e5fb361fd8067eb11b9a199f6fc7cc6784b1aa1df8142e33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4949422/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4949422/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,27923,27924,41119,42188,51575,53790,53792</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27432047$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Wong, P. K. Johnny</creatorcontrib><creatorcontrib>Zhang, Wen</creatorcontrib><creatorcontrib>Wu, Jing</creatorcontrib><creatorcontrib>Will, Iain G.</creatorcontrib><creatorcontrib>Xu, Yongbing</creatorcontrib><creatorcontrib>Xia, Ke</creatorcontrib><creatorcontrib>Holmes, Stuart N.</creatorcontrib><creatorcontrib>Farrer, Ian</creatorcontrib><creatorcontrib>Beere, Harvey E.</creatorcontrib><creatorcontrib>Ritchie, Dave A.</creatorcontrib><title>Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. 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K. Johnny</au><au>Zhang, Wen</au><au>Wu, Jing</au><au>Will, Iain G.</au><au>Xu, Yongbing</au><au>Xia, Ke</au><au>Holmes, Stuart N.</au><au>Farrer, Ian</au><au>Beere, Harvey E.</au><au>Ritchie, Dave A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2016-07-19</date><risdate>2016</risdate><volume>6</volume><issue>1</issue><spage>29845</spage><epage>29845</epage><pages>29845-29845</pages><artnum>29845</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. 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| subjects | 639/301 639/925 Bias Data storage Diodes Electrodes Fabrication Humanities and Social Sciences Injection Molecular beam epitaxy multidisciplinary Science Valves |
| title | Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves |
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