Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalize...

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Veröffentlicht in:	Scientific reports 2016-07, Vol.6 (1), p.29112-29112, Article 29112
Hauptverfasser:	Gao, Xian, Wei, Zhipeng, Zhao, Fenghuan, Yang, Yahui, Chen, Rui, Fang, Xuan, Tang, Jilong, Fang, Dan, Wang, Dengkui, Li, Ruixue, Ge, Xiaotian, Ma, Xiaohui, Wang, Xiaohua
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1019 639/624/399 639/766/1130 639/766/119/544 Alloys Alloys - chemistry Emissions Energy Gallium arsenide Humanities and Social Sciences Investigations Low temperature Materials Testing - methods Molecular beam epitaxy multidisciplinary Optical properties Science Spectrum Analysis Temperature
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