Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at roo...

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Veröffentlicht in:Scientific reports 2016-06, Vol.6 (1), p.27869-27869, Article 27869
Hauptverfasser: Taz, H., Sakthivel, T., Yamoah, N. K., Carr, C., Kumar, D., Seal, S., Kalyanaraman, R.
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container_issue 1
container_start_page 27869
container_title Scientific reports
container_volume 6
creator Taz, H.
Sakthivel, T.
Yamoah, N. K.
Carr, C.
Kumar, D.
Seal, S.
Kalyanaraman, R.
description We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10 −4  Ω-cm and ~200 Ω/sq respectively) and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R 
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K. ; Carr, C. ; Kumar, D. ; Seal, S. ; Kalyanaraman, R.</creator><creatorcontrib>Taz, H. ; Sakthivel, T. ; Yamoah, N. K. ; Carr, C. ; Kumar, D. ; Seal, S. ; Kalyanaraman, R. ; Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)</creatorcontrib><description>We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10 −4  Ω-cm and ~200 Ω/sq respectively) and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R &lt; 11.9) also correlated well with the absence of any metallic Fe 0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. 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K.</au><au>Carr, C.</au><au>Kumar, D.</au><au>Seal, S.</au><au>Kalyanaraman, R.</au><aucorp>Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2016-06-14</date><risdate>2016</risdate><volume>6</volume><issue>1</issue><spage>27869</spage><epage>27869</epage><pages>27869-27869</pages><artnum>27869</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10 −4  Ω-cm and ~200 Ω/sq respectively) and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R &lt; 11.9) also correlated well with the absence of any metallic Fe 0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. 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subjects 639/301
639/301/119
BASIC BIOLOGICAL SCIENCES
Evaporation
Humanities and Social Sciences
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Light transmission
Magnetic properties
MATERIALS SCIENCE
Morphology
multidisciplinary
Oxidation
Scanning electron microscopy
Science
Science & Technology - Other Topics
Temperature
Thin films
X-ray diffraction
title Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films
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