Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in R NiO 3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of...

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Veröffentlicht in:	Scientific reports 2016-02, Vol.6 (1), p.22228-22228, Article 22228
Hauptverfasser:	Heo, Seungyang, Oh, Chadol, Eom, Man Jin, Kim, Jun Sung, Ryu, Jungho, Son, Junwoo, Jang, Hyun Myung
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1007 639/301/119/2795 639/301/119/544 Electronic equipment Energy efficiency Humanities and Social Sciences multidisciplinary Science Substrates Temperature effects Thin films Transition temperatures
Online-Zugang:	Volltext
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