Effect of Graphene Oxide on the Properties of Porous Silicon

We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS–GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), a...

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Veröffentlicht in:Nanoscale research letters 2016-12, Vol.11 (1), p.43-43, Article 43
Hauptverfasser: Olenych, Igor B., Aksimentyeva, Olena I., Monastyrskii, Liubomyr S., Horbenko, Yulia Yu, Partyka, Maryan V., Luchechko, Andriy P., Yarytska, Lidia I.
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Sprache:eng
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