Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing

We propose the use of thin Ag film deposition to remedy the degradation of near-infrared (NIR) absorption of black Si caused by high-temperature thermal annealing. A large amount of random and irregular Ag nanoparticles are formed on the microstructural surface of black Si after Ag film deposition,...

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Veröffentlicht in:Nanoscale research letters 2016-12, Vol.11 (1), p.56-56, Article 56
Hauptverfasser: Wang, Yanchao, Gao, Jinsong, Yang, Haigui, Wang, Xiaoyi, Shen, Zhenfeng
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container_title Nanoscale research letters
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creator Wang, Yanchao
Gao, Jinsong
Yang, Haigui
Wang, Xiaoyi
Shen, Zhenfeng
description We propose the use of thin Ag film deposition to remedy the degradation of near-infrared (NIR) absorption of black Si caused by high-temperature thermal annealing. A large amount of random and irregular Ag nanoparticles are formed on the microstructural surface of black Si after Ag film deposition, which compensates the degradation of NIR absorption of black Si caused by thermal annealing. The formation of Ag nanoparticles and their contributions to NIR absorption of black Si are discussed in detail.
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A large amount of random and irregular Ag nanoparticles are formed on the microstructural surface of black Si after Ag film deposition, which compensates the degradation of NIR absorption of black Si caused by thermal annealing. 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subjects Absorption
Annealing
Chemistry and Materials Science
Degradation
Deposition
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoparticles
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Silicon
Silver
Surface chemistry
title Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing
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