High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)

The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer g...

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Veröffentlicht in:Scientific reports 2016-01, Vol.6 (1), p.18791, Article 18791
Hauptverfasser: Hajlaoui, Mahdi, Sediri, Haikel, Pierucci, Debora, Henck, Hugo, Phuphachong, Thanyanan, Silly, Mathieu G., de Vaulchier, Louis-Anne, Sirotti, Fausto, Guldner, Yves, Belkhou, Rachid, Ouerghi, Abdelkarim
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Sprache:eng
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