High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)
The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer g...
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| Veröffentlicht in: | Scientific reports 2016-01, Vol.6 (1), p.18791, Article 18791 |
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| creator | Hajlaoui, Mahdi Sediri, Haikel Pierucci, Debora Henck, Hugo Phuphachong, Thanyanan Silly, Mathieu G. de Vaulchier, Louis-Anne Sirotti, Fausto Guldner, Yves Belkhou, Rachid Ouerghi, Abdelkarim |
| description | The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)
1/2
dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm
2
·V
−1
·s
−1
at 4 K. |
| doi_str_mv | 10.1038/srep18791 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4704025</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1899038541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c472t-395d017f0e4109335b84e0d022930fd628e6537389fc07ff34962e131f331c8f3</originalsourceid><addsrcrecordid>eNplkV1PwjAUhhujEYNc-AfMEm_EZHr6sY_emBCCYMRwIV43Y2tZydhmO4j8e0tARO1Nm3OePqfNi9AVhnsMNH6wRtY4jjg-QRcEWOATSsjp0bmFOtYuwK2AcIb5OWqRMKKchuEFehnpee4NCpk2piq912qmC91sPF16g1o3yadOCm9qdJFspPGGJqlzWUrPoROlfNe23pvu3zo57l6iM5UUVnb2exu9Pw2m_ZE_ngyf-72xn7KIND7lQQY4UiAZBk5pMIuZhAwI4RRUFpJYhgGNaMxVCpFSlPGQSEyxohSnsaJt9Ljz1qvZUmapLBuTFKI2epmYjagSLX53Sp2LebUWLAIGJHCC7k6Q_7k26o3FtgaYRBByWGPH3uyHmepjJW0jFtXKlO5_AsecuwQChn-MqamsS0QdtBjENiZxiMmx18fPP5DfoTjgbgdY1yrn0hyN_Gf7AlTOmFk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1899038541</pqid></control><display><type>article</type><title>High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)</title><source>Nature Free</source><source>DOAJ Directory of Open Access Journals</source><source>EZB-FREE-00999 freely available EZB journals</source><source>PubMed Central</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><source>Springer Nature OA Free Journals</source><creator>Hajlaoui, Mahdi ; Sediri, Haikel ; Pierucci, Debora ; Henck, Hugo ; Phuphachong, Thanyanan ; Silly, Mathieu G. ; de Vaulchier, Louis-Anne ; Sirotti, Fausto ; Guldner, Yves ; Belkhou, Rachid ; Ouerghi, Abdelkarim</creator><creatorcontrib>Hajlaoui, Mahdi ; Sediri, Haikel ; Pierucci, Debora ; Henck, Hugo ; Phuphachong, Thanyanan ; Silly, Mathieu G. ; de Vaulchier, Louis-Anne ; Sirotti, Fausto ; Guldner, Yves ; Belkhou, Rachid ; Ouerghi, Abdelkarim</creatorcontrib><description>The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)
1/2
dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm
2
·V
−1
·s
−1
at 4 K.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep18791</identifier><identifier>PMID: 26739366</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>140/133 ; 140/146 ; 639/301/357/918/1055 ; 639/925/918/1055 ; Atomic force microscopy ; Engineering Sciences ; Humanities and Social Sciences ; Micro and nanotechnologies ; Microelectronics ; Mobility ; multidisciplinary ; Nanotubes ; Science ; Spectroscopy</subject><ispartof>Scientific reports, 2016-01, Vol.6 (1), p.18791, Article 18791</ispartof><rights>The Author(s) 2016</rights><rights>Copyright Nature Publishing Group Jan 2016</rights><rights>Attribution</rights><rights>Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c472t-395d017f0e4109335b84e0d022930fd628e6537389fc07ff34962e131f331c8f3</citedby><cites>FETCH-LOGICAL-c472t-395d017f0e4109335b84e0d022930fd628e6537389fc07ff34962e131f331c8f3</cites><orcidid>0000-0001-8753-8425 ; 0000-0001-8751-1994 ; 0000-0002-1898-2765</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4704025/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4704025/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,860,881,27901,27902,41096,42165,51551,53766,53768</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26739366$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.sorbonne-universite.fr/hal-01270690$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Hajlaoui, Mahdi</creatorcontrib><creatorcontrib>Sediri, Haikel</creatorcontrib><creatorcontrib>Pierucci, Debora</creatorcontrib><creatorcontrib>Henck, Hugo</creatorcontrib><creatorcontrib>Phuphachong, Thanyanan</creatorcontrib><creatorcontrib>Silly, Mathieu G.</creatorcontrib><creatorcontrib>de Vaulchier, Louis-Anne</creatorcontrib><creatorcontrib>Sirotti, Fausto</creatorcontrib><creatorcontrib>Guldner, Yves</creatorcontrib><creatorcontrib>Belkhou, Rachid</creatorcontrib><creatorcontrib>Ouerghi, Abdelkarim</creatorcontrib><title>High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)
1/2
dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm
2
·V
−1
·s
−1
at 4 K.</description><subject>140/133</subject><subject>140/146</subject><subject>639/301/357/918/1055</subject><subject>639/925/918/1055</subject><subject>Atomic force microscopy</subject><subject>Engineering Sciences</subject><subject>Humanities and Social Sciences</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Mobility</subject><subject>multidisciplinary</subject><subject>Nanotubes</subject><subject>Science</subject><subject>Spectroscopy</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>BENPR</sourceid><recordid>eNplkV1PwjAUhhujEYNc-AfMEm_EZHr6sY_emBCCYMRwIV43Y2tZydhmO4j8e0tARO1Nm3OePqfNi9AVhnsMNH6wRtY4jjg-QRcEWOATSsjp0bmFOtYuwK2AcIb5OWqRMKKchuEFehnpee4NCpk2piq912qmC91sPF16g1o3yadOCm9qdJFspPGGJqlzWUrPoROlfNe23pvu3zo57l6iM5UUVnb2exu9Pw2m_ZE_ngyf-72xn7KIND7lQQY4UiAZBk5pMIuZhAwI4RRUFpJYhgGNaMxVCpFSlPGQSEyxohSnsaJt9Ljz1qvZUmapLBuTFKI2epmYjagSLX53Sp2LebUWLAIGJHCC7k6Q_7k26o3FtgaYRBByWGPH3uyHmepjJW0jFtXKlO5_AsecuwQChn-MqamsS0QdtBjENiZxiMmx18fPP5DfoTjgbgdY1yrn0hyN_Gf7AlTOmFk</recordid><startdate>20160107</startdate><enddate>20160107</enddate><creator>Hajlaoui, Mahdi</creator><creator>Sediri, Haikel</creator><creator>Pierucci, Debora</creator><creator>Henck, Hugo</creator><creator>Phuphachong, Thanyanan</creator><creator>Silly, Mathieu G.</creator><creator>de Vaulchier, Louis-Anne</creator><creator>Sirotti, Fausto</creator><creator>Guldner, Yves</creator><creator>Belkhou, Rachid</creator><creator>Ouerghi, Abdelkarim</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88E</scope><scope>88I</scope><scope>8FE</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M2P</scope><scope>M7P</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>1XC</scope><scope>VOOES</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0001-8753-8425</orcidid><orcidid>https://orcid.org/0000-0001-8751-1994</orcidid><orcidid>https://orcid.org/0000-0002-1898-2765</orcidid></search><sort><creationdate>20160107</creationdate><title>High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)</title><author>Hajlaoui, Mahdi ; Sediri, Haikel ; Pierucci, Debora ; Henck, Hugo ; Phuphachong, Thanyanan ; Silly, Mathieu G. ; de Vaulchier, Louis-Anne ; Sirotti, Fausto ; Guldner, Yves ; Belkhou, Rachid ; Ouerghi, Abdelkarim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c472t-395d017f0e4109335b84e0d022930fd628e6537389fc07ff34962e131f331c8f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>140/133</topic><topic>140/146</topic><topic>639/301/357/918/1055</topic><topic>639/925/918/1055</topic><topic>Atomic force microscopy</topic><topic>Engineering Sciences</topic><topic>Humanities and Social Sciences</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Mobility</topic><topic>multidisciplinary</topic><topic>Nanotubes</topic><topic>Science</topic><topic>Spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hajlaoui, Mahdi</creatorcontrib><creatorcontrib>Sediri, Haikel</creatorcontrib><creatorcontrib>Pierucci, Debora</creatorcontrib><creatorcontrib>Henck, Hugo</creatorcontrib><creatorcontrib>Phuphachong, Thanyanan</creatorcontrib><creatorcontrib>Silly, Mathieu G.</creatorcontrib><creatorcontrib>de Vaulchier, Louis-Anne</creatorcontrib><creatorcontrib>Sirotti, Fausto</creatorcontrib><creatorcontrib>Guldner, Yves</creatorcontrib><creatorcontrib>Belkhou, Rachid</creatorcontrib><creatorcontrib>Ouerghi, Abdelkarim</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Health & Medical Collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Central</collection><collection>Natural Science Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>ProQuest Biological Science Collection</collection><collection>Health & Medical Collection (Alumni Edition)</collection><collection>Medical Database</collection><collection>Science Database</collection><collection>Biological Science Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hajlaoui, Mahdi</au><au>Sediri, Haikel</au><au>Pierucci, Debora</au><au>Henck, Hugo</au><au>Phuphachong, Thanyanan</au><au>Silly, Mathieu G.</au><au>de Vaulchier, Louis-Anne</au><au>Sirotti, Fausto</au><au>Guldner, Yves</au><au>Belkhou, Rachid</au><au>Ouerghi, Abdelkarim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2016-01-07</date><risdate>2016</risdate><volume>6</volume><issue>1</issue><spage>18791</spage><pages>18791-</pages><artnum>18791</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)
1/2
dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm
2
·V
−1
·s
−1
at 4 K.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>26739366</pmid><doi>10.1038/srep18791</doi><orcidid>https://orcid.org/0000-0001-8753-8425</orcidid><orcidid>https://orcid.org/0000-0001-8751-1994</orcidid><orcidid>https://orcid.org/0000-0002-1898-2765</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | 140/133 140/146 639/301/357/918/1055 639/925/918/1055 Atomic force microscopy Engineering Sciences Humanities and Social Sciences Micro and nanotechnologies Microelectronics Mobility multidisciplinary Nanotubes Science Spectroscopy |
| title | High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001) |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T23%3A49%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20Electron%20Mobility%20in%20Epitaxial%20Trilayer%20Graphene%20on%20Off-axis%20SiC(0001)&rft.jtitle=Scientific%20reports&rft.au=Hajlaoui,%20Mahdi&rft.date=2016-01-07&rft.volume=6&rft.issue=1&rft.spage=18791&rft.pages=18791-&rft.artnum=18791&rft.issn=2045-2322&rft.eissn=2045-2322&rft_id=info:doi/10.1038/srep18791&rft_dat=%3Cproquest_pubme%3E1899038541%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1899038541&rft_id=info:pmid/26739366&rfr_iscdi=true |