Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by ele...

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Veröffentlicht in:	Nanoscale research letters 2015-12, Vol.10 (1), p.432-432, Article 432
Hauptverfasser:	Huang, Ruomeng, Kissling, Gabriela P., Jolleys, Andrew, Bartlett, Philip N., Hector, Andrew L., Levason, William, Reid, Gillian, De Groot, C. H. ‘Kees’
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Amorphous materials Chemistry and Materials Science Crystal structure Deposition Electrodeposition Endurance Germanium Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Thin films
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Beschreibung
Zusammenfassung:	We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.
ISSN:	1931-7573 1556-276X
DOI:	10.1186/s11671-015-1136-4