Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI 3 )/titanium dioxide (TiO 2 )/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI 3 /TiO 2 than the polished silicon substrate such that the MAPbI 3 /TiO 2 /porous...
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| Veröffentlicht in: | Nanoscale research letters 2015-12, Vol.10 (1), p.404-404, Article 404 |
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| creator | Chen, Lung-Chien Weng, Chiao-Yu |
| description | This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI
3
)/titanium dioxide (TiO
2
)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI
3
/TiO
2
than the polished silicon substrate such that the MAPbI
3
/TiO
2
/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300–460 nm and 520–800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI
3
/TiO
2
/porous Si heterostructure can be utilized as cyan sensors. |
| doi_str_mv | 10.1186/s11671-015-1114-x |
| format | Article |
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3
)/titanium dioxide (TiO
2
)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI
3
/TiO
2
than the polished silicon substrate such that the MAPbI
3
/TiO
2
/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300–460 nm and 520–800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI
3
/TiO
2
/porous Si heterostructure can be utilized as cyan sensors.</description><identifier>ISSN: 1931-7573</identifier><identifier>EISSN: 1556-276X</identifier><identifier>DOI: 10.1186/s11671-015-1114-x</identifier><identifier>PMID: 26474885</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Chemistry and Materials Science ; Materials Science ; Molecular Medicine ; Nano Express ; Nanochemistry ; Nanoscale Science and Technology ; Nanotechnology ; Nanotechnology and Microengineering</subject><ispartof>Nanoscale research letters, 2015-12, Vol.10 (1), p.404-404, Article 404</ispartof><rights>Chen and Weng. 2015</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c442t-cf88df4cc713a7978da221dfa2ef84055ff3f1488ad6e2cb672b56aa3da66bd03</citedby><cites>FETCH-LOGICAL-c442t-cf88df4cc713a7978da221dfa2ef84055ff3f1488ad6e2cb672b56aa3da66bd03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4608950/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4608950/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,860,881,27901,27902,53766,53768</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26474885$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, Lung-Chien</creatorcontrib><creatorcontrib>Weng, Chiao-Yu</creatorcontrib><title>Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications</title><title>Nanoscale research letters</title><addtitle>Nanoscale Res Lett</addtitle><addtitle>Nanoscale Res Lett</addtitle><description>This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI
3
)/titanium dioxide (TiO
2
)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI
3
/TiO
2
than the polished silicon substrate such that the MAPbI
3
/TiO
2
/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300–460 nm and 520–800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI
3
/TiO
2
/porous Si heterostructure can be utilized as cyan sensors.</description><subject>Chemistry and Materials Science</subject><subject>Materials Science</subject><subject>Molecular Medicine</subject><subject>Nano Express</subject><subject>Nanochemistry</subject><subject>Nanoscale Science and Technology</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><issn>1931-7573</issn><issn>1556-276X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9Uc1u1DAQjhAVLaUPwAX5yCXU48R29oK0Wn5aqVVXapF6sxxnXFyydrCdavsKPDVebangwsljfz-ema-q3gL9ANCJ0wQgJNQUeA0Abb19UR0B56JmUty-LPWigVpy2RxWr1O6p7SVVIpX1SETrWy7jh9Vv66mHHBEk2PwzpB1DBPG7DCRYMnlct2fN2SNMTykHy7j6Y3L2rt5Qz65sHUDkjPMBU05zibPcSfzZB1imBO5dqMz5Xo99wXXuYA2RLJ61OUNfSr1cpoKR2cXfHpTHVg9Jjx5Oo-rb18-36zO6ourr-er5UVt2pbl2tiuG2xrjIRGy4XsBs0YDFYztF1LObe2sVCm04NAZnohWc-F1s2ghegH2hxXH_e-09xvcDDoS3OjmqLb6PiognbqX8S77-ouPKhW0G7Bdwbvnwxi-DljymrjksFx1B7L3AokY4uGMhCFCnuqKTtKEe3zN0DVLkO1z1CVDNUuQ7Utmnd_9_es-BNaIbA9IRXI32FU92GOvuzsP66_AaWArX0</recordid><startdate>20151201</startdate><enddate>20151201</enddate><creator>Chen, Lung-Chien</creator><creator>Weng, Chiao-Yu</creator><general>Springer US</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20151201</creationdate><title>Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications</title><author>Chen, Lung-Chien ; Weng, Chiao-Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c442t-cf88df4cc713a7978da221dfa2ef84055ff3f1488ad6e2cb672b56aa3da66bd03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Chemistry and Materials Science</topic><topic>Materials Science</topic><topic>Molecular Medicine</topic><topic>Nano Express</topic><topic>Nanochemistry</topic><topic>Nanoscale Science and Technology</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Lung-Chien</creatorcontrib><creatorcontrib>Weng, Chiao-Yu</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Nanoscale research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Lung-Chien</au><au>Weng, Chiao-Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications</atitle><jtitle>Nanoscale research letters</jtitle><stitle>Nanoscale Res Lett</stitle><addtitle>Nanoscale Res Lett</addtitle><date>2015-12-01</date><risdate>2015</risdate><volume>10</volume><issue>1</issue><spage>404</spage><epage>404</epage><pages>404-404</pages><artnum>404</artnum><issn>1931-7573</issn><eissn>1556-276X</eissn><abstract>This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI
3
)/titanium dioxide (TiO
2
)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI
3
/TiO
2
than the polished silicon substrate such that the MAPbI
3
/TiO
2
/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300–460 nm and 520–800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI
3
/TiO
2
/porous Si heterostructure can be utilized as cyan sensors.</abstract><cop>New York</cop><pub>Springer US</pub><pmid>26474885</pmid><doi>10.1186/s11671-015-1114-x</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Nanoscale research letters, 2015-12, Vol.10 (1), p.404-404, Article 404 |
| issn | 1931-7573 1556-276X |
| language | eng |
| recordid | cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4608950 |
| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; PubMed Central; Free Full-Text Journals in Chemistry; PubMed Central Open Access |
| subjects | Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering |
| title | Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications |
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