Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

We report a large but asymmetric magnetoresistance in silicon p - n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a m...

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Veröffentlicht in:	Scientific reports 2015-09, Vol.5 (1), p.11096-11096, Article 11096
Hauptverfasser:	Yang, D. Z., Wang, T., Sui, W. B., Si, M. S., Guo, D. W., Shi, Z., Wang, F. C., Xue, D. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301 639/766/1130/2798 Asymmetry Humanities and Social Sciences Magnetic fields Magnetism Metals multidisciplinary Science Silicon Temperature effects
Online-Zugang:	Volltext
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