Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

GaAs/Al 0.1 Ga 0.9 As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on gold nanoparticle-activated Si (100) and Si (111) substrates via molecular beam epitaxy. Room temperature-photoluminescence (RT-PL) from the samples showed bulk-like GaAs and Al 0.1 Ga 0.9 As bandg...

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Veröffentlicht in:	Nanoscale research letters 2015-08, Vol.10 (1), p.1050-1050, Article 337
Hauptverfasser:	delos Santos, Ramon, Ibañes, Jasher John, Balgos, Maria Herminia, Jaculbia, Rafael, Afalla, Jessica Pauline, Bailon-Somintac, Michelle, Estacio, Elmer, Salvador, Arnel, Somintac, Armando, Que, Christopher, Tsuzuki, Satoshi, Yamamoto, Kohji, Tani, Masahiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering
Online-Zugang:	Volltext
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